Hewlett-packard Development Company, L.p.

Sandia Corporation

Douglas Ohlberg

Duncan R Stewart

Philip John Kuekes

Richard Stanley Williams

Zhiyong Li

Jianhua Yang

Patricia A Beck

Alexandre M Bratkovski

Nathaniel Quitoriano

Thomas E Felter

Alec Talin

Lawrence S Pam

Sung Han

Ciaran Fox

Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode () and an alloy electrode (). The device also includes an active region () sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.

Using alloy electrodes to dope memristors

A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.

Switching device and methods for controlling electron tunneling therein

A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.

Memristive device

A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.

Control layer for a nanoscale electronic switching device

Programmable impedance devices and methods of fabricating the devices are disclosed. The programmable impedance devices exhibit non-volatile tunable impedance properties. A programmable impedance device includes a first electrode, a second electrode and a programmable material disposed between the two electrodes. The programmable material may be disposed at a junction between the first and second electrodes.

Non-volatile programmable impedance nanoscale devices

A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety and connecting the pair of crossed electrode in the junction. The junction has a functional dimension ranging in size from microns to nanometers. The molecular device further includes a buffer layer comprising nanocrystals interposed between the connector species and the second electrode.

Nanocrystal protective layer for crossbar molecular electronic devices

A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., AlOover the conductive layer.

Custom electrodes for molecular memory and logic devices

This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/.mu.m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 .mu.m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceeded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material.

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Mountain View, CA, United States of America

Douglas Ohlberg