Feldman Technology Corporation

Douglas McLean

Bernard Feldman

A method of etching a metal oxide film includes depositing a metal (M) on the metal oxide film and contacting the metal oxide film and the metal (M) with an etch liquid comprising an acid (A) and a metal dissolution agent (X). The method can avoid patchwise etch.

Method for etching

Metal oxide films are etched with a metal and an etch liquid containing an acid and a metal penetration control agent.

Etched metal oxide film

Masked tin oxide films are etched with an etchant composed of hydrochloric acid and a penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H,) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H,.

Masked tin oxide films are etched with an etchant composed of a zinc metal, an acid and a Ni,penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H,) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H,.

Masked tin oxide films are etched with an etchant composed of zinc metal, HCl, and a penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H,) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H,.

Method for etching metal oxide films, especially tin oxide on a substrate in which a metal (Zn) is deposited on said film and etching is performed by a mixture of an acid, such as hydrochloric acid (HCl) and a metal dissolution agent, such as ferric chloride. The hydrochloric acid reacts with the zinc to produce active hydrogen which reduces the tin oxide to tin, which in turn is etched with the hydrochloric acid.

Growing community of inventors

Los Gatos, CA, United States of America

Douglas McLean