International Business Machines Corporation

Lucent Technologies Inc.

Alcatel Lucent

Alcatel-lucent USA Inc.

Triquint Technology Holding Co.

Noble Devices Technologies

Douglas Max Gill

Mahmoud Rasras

Xiang Liu

William M Green

Solomon Assefa

Jonathan E Proesel

Xing Wei

Sanjay Patel

Chi Xiong

Vivekananda P Adiga

Jessie Carrigan Rosenberg

Tymon Barwicz

Jason Scott Orcutt

Martin O Sandberg

Mark Lee

Alexander V Rylyakov

Alberto Valdes Garcia

Marwan H Khater

Jerry M Chow

Yurii A Vlasov

Howard Edan Katz

Clint Lee Schow

Christi Kay Madsen

David S Levy

Christoph Georg Erben

Dale Conrad Jacobson

Moncef B Tayahi

Christopher Richard Doerr

Stephen McConnell Gates

Kevin Shawn Petrarca

Russell Alan Budd

Yves Corfield Martin

Eugen Schenfeld

Aref Chowdhury

Hanhee Paik

Conor S Rafferty

Steven K Korotky

Raymond Wolfe

John VanAtta Gates

Robert W Smith

Kun-Yii Tu

Nils Guenter Weimann

Christopher D W Jones

Sanjay Shantilal Patel

A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.

Superconducting qubit capacitance and frequency of operation tuning

The subject disclosure is directed towards layered substrate structures with aligned optical access to electrical devices formed thereon for laser processing and electrical device tuning. According to an embodiment, a layered substrate structure is provided that comprises an optical substrate having a first surface and a second surface and a patterned bonding layer formed on the second surface that comprises a bonding region and an open region, wherein the open region exposes a portion of the second surface. The layered substrate structure further comprises a device chip bonded to the patterned bonding layer via the bonding region and comprising at least one electrical component aligned with the optical substrate and the open region. The at least one electrical component can include for example, a thin film wire, an air bridge, a qubit, an electrode, a capacitor or a resonator.

Layered substrate structures with aligned optical access to electrical devices

A method for improving lifetime and coherence time of a qubit in a quantum mechanical device is provided. The method includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit having capacitor pads. The method further includes at least one of removing an amount of substrate material from the backside of the substrate at an area opposite the at least one qubit or depositing a superconducting metal layer at the backside of the substrate at the area opposite the at least one qubit to reduce radiofrequency electrical current loss due to at least one of silicon-air (SA) interface, metal-air (MA) interface or silicon-metal (SM) interface so as to enhance a lifetime (T1) and a coherence time (T2) in the at least one qubit.

Superconducting qubit lifetime and coherence improvement via backside etching

Photonic circuits are disclosed having an efficient optical power distribution network. Laser chips (InP) having different wavelengths are flip-chip assembled near the center of a silicon photonic chip. Each InP die has multiple optical lanes, but a given die has only one wavelength. Waveguides formed in the photonic chip are optically connected to the lanes, and fan out to form multiple waveguide sets, where each waveguide set has one of the waveguides from each of the different wavelengths, i.e., one waveguide from each InP die. The waveguide network is optimized to minimize the number of crossings that any given waveguide may have, and no waveguide having a particular wavelength crosses another waveguide of the same wavelength. The unique arrangements of light sources and waveguides allows the use of a smaller number of more intense laser sources, particularly in applications such as performance-optimized datacenters where liquid cooling systems may be leveraged.

Efficient photonic circuits for liquid-cooled high-density datacenters

Techniques regard electro-optic modulators are provided. For example, one or embodiments described herein can regard an apparatus that can comprise a first lateral region, a second lateral region, and a central region located on a semiconductor substrate. The first lateral region can be adjacent to a first side of the central region and can have a first conductivity type. The second lateral region can be adjacent to a second side of the central region and can have a second conductivity type. Also, the first side can be opposite to the second side. Further, the central region can comprise a diode junction adjacent to an intrinsic region. The intrinsic region can separate the first lateral region and the second lateral region.

Electro-optic modulator with a periodic junction arrangement

Techniques for increasing efficiency of thermo-optic phase shifters using multi-pass heaters and thermal bridges are provided. In one aspect, a thermo-optic phase shifter device includes: a plurality of optical waveguides formed in an SOI layer over a buried insulator; at least one heating element adjacent to the optical waveguides; and thermal bridges connecting at least one of the optical waveguides directly to the heating element. A method for forming a thermo-optic phase shifter device is also provided.

Efficient thermo-optic phase shifters using multi-pass heaters

A dual-use thermal and electro-optic modulator. A thermal adjustment hardware set and an electric-field adjustment hardware set adjust the thermal and electrostatic properties of a common waveguide area. The hardware sets are electrically coupled. Signals for each type of modulation are conducted to the waveguide through a shared portion of a communication medium.

Dual-use electro-optic and thermo-optic modulator

A method and apparatus for controlling operation of an electro-optic modulator is disclosed. A first intensity of light is obtained at an input to the electro-optic modulator. A second intensity of light is obtained at an output of the electro-optic modulator. A difference between the obtained first intensity and the obtained second intensity is used to control a biasing of a modulator transfer function of the electro-optic modulator to control the electro-optic modulator.

Dual-tap electro-optic modulator auto-bias control

A method of modulating an optical input with a radio frequency (RF) signal, an interdigitated modulator, and an electro-optical modulator including the interdigitated modulator are described. The method includes splitting the optical input to a first optical input and a second optical input, traversing a first region and a second region, respectively, with the first optical input and the second optical input, and modulating the first optical input with the RF signal in the first region. The method also includes controlling propagation speed of the RF signal in the first region, controlling RF line impedance in the first region, and controlling an optical loss of the first optical input in the first region.

Controlled-capacitance full-depletion interdigitated pin modulator

Growing community of inventors

South Orange, NJ, United States of America

Douglas Max Gill