International Business Machines Corporation

Douglas M Bishop

Teodor Krassimirov Todorov

John Rozen

Saurabh Singh

Yun Seog Lee

Jianshi Tang

Martin Michael Frank

Oki Gunawan

Richard Alan Haight

Priscilla D Antunez

Gloria W Fraczak

Devendra K Sadana

Takashi Ando

Tze-Chiang Chen

A method of fabricating a synaptic device is provided. The method includes forming a channel layer between a first terminal and a second terminal. The channel layer varies in resistance based on a magnesium concentration in the channel layer. The method further includes forming an electrolyte layer. The electrolyte layer includes a magnesium ion conductive material. A third terminal is formed over the electrolyte layer and applies a signal to the electrolyte layer and the channel layer.

Magnesium ion based synaptic device

Methods of forming variable-resistance devices include forming a variable-resistance layer between a first terminal and a second terminal from a material that varies in resistance based on an oxygen concentration. An electrolyte layer is formed over the variable-resistance layer from a material that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. A conductive gate layer is formed over the electrolyte layer.

Three-terminal oxygen intercalation neuromorphic devices

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.

Neuromorphic device with oxygen scavenging gate

A system for and methods of semiconductor testing and characterization are disclosed. The system includes a parallel dipole line (PDL) system for applying a magnetic field to a sample in a measurement chamber and electrical equipment for testing the sample. The testing includes applying a first light exposure to the sample with the PDL system set to zero magnetic field and monitoring longitudinal resistance (R) of the sample as intensity of the first light exposure varies. A second light exposure is applied with the PDL system set to maximum magnetic field, and transverse magnetoresistance (R) is monitored as light intensity varies. A third light exposure is applied with the PDL system set to minimum magnetic field, and transverse magnetoresistance (R) is monitored as light intensity varies. The characterization includes carrying out a photo-Hall analysis based on data from the testing.

Rapid carrier-resolved photo-hall analysis

Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

Semitransparent chalcogen solar cell

A neuromorphic semiconductor device includes a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate. A copper-based electrolyte layer is disposed on the copper-based intercalation channel and a copper-based gate electrode is disposed on the copper-based electrolyte layer.

Neuromorphic device driven by copper ion intercalation

Selenium-fullerene heterojunction solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a front contact on a substrate; depositing an n-type semiconducting layer on the front contact, wherein the n-type semiconducting layer comprises a fullerene or fullerene derivative; forming a p-type chalcogen absorber layer on the n-type semiconducting layer; depositing a high workfunction material onto the p-type chalcogen absorber layer, wherein the high workfunction material has a workfunction of greater than about 5.2 electron volts; and forming a back contact on the high workfunction material. Solar cells and other methods for formation thereof are also provided.

Selenium-fullerene heterojunction solar cell

Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.

High work function MoO2 back contacts for improved solar cell performance

A neuromorphic device includes a first electrode layer arranged on a substrate, and an electrolyte layer arranged on the first electrode layer. The electrolyte layer includes a solid electrolyte material. The neuromorphic device further includes an ion permeable, electrically conductive membrane arranged on the electrolyte layer and an ion intercalation layer arranged on the ion permeable, electrically conductive membrane. The neuromorphic device includes a second electrode layer arranged on the ion intercalation layer.

Three-terminal neuromorphic vertical sensing

Variable-resistance devices and methods of forming the same include a variable-resistance layer, formed between a first terminal and a second terminal, that varies in resistance based on an oxygen concentration in the variable-resistance layer. An electrolyte layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage is positioned over the variable-resistance layer. A gate layer is configured to apply a voltage on the electrolyte layer and the variable-resistance layer and is positioned over the electrolyte layer.

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New York, NY, United States of America

Douglas M Bishop