Innovative Micro Technology

Douglas L Thompson

John Stuart Foster

Gregory A Carlson

Alok Paranjpye

David M Erlach

Jaquelin K Spong

Christopher S Gudeman

Jeffery Frank Summers

John Harley

Daryl Grummitt

James P Linton

Donald C Liu

A disposable cartridge is described which is equipped with a plurality of microfabricated particle sorting structures. The disposable cartridge may include passageways which connect fluid reservoirs in the cartridge with corresponding microfluidic passageways on the particle sorting structure. A flexible gasket may prevent leakages and allow the fluid to cross the gasket barrier through a plurality of holes in the gasket, allowing fluid to be transferred from the reservoirs to the microfabricated particle sorting structures. The plurality of particle sorting structures may be arranged in the disposable cartridge in order to perform multiple separation operations, such as a sequential or parallel sorting operation.

Multi-stage cartridge for MEMS particle storing system

Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate. At least one of the substrates may include a raised feature formed under at least one of the metal layers. The two metals may for an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. This alloy may have advantageous features in terms of density, mechanical, electrical or physical properties that may improve the hermeticity of the seal, for example.

Wafer level hermetic bond using metal alloy with keeper layer

Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate. At least one of the substrates may include a raised feature formed under at least one of the metal layers. One of the metal layer may have a diffusion barrier layer and a 'keeper' layer formed thereover, wherein the keeper layers keeps the metal confined to a particular area. By using such a 'keeper' layer, the substrate components may be heated to clean their surfaces, without activating or spending the bonding mechanism.

A method for providing access to a feature on a device wafer, and located outside an encapsulation region is described. The method includes forming a cavity in the lid wafer, aligning the lid wafer with the device wafer so that the cavity is located substantially above the feature, and removing material substantially uniformly from the bottom surface of the lid wafer, until an aperture is formed at the cavity, over the feature on the device wafer. By removing material from the lid wafer in a substantially uniform manner, difficulties with the prior art procedure of saw cutting, such as alignment and debris generation, are avoided.

System and method for providing access to an encapsulated device

A material for forming a conductive structure for a MEMS device is described, which is an alloy containing about 0.01% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower than the sheet resistance of the pure metal. In addition, the alloy may have superior creep and higher recrystallization temperature than the pure metal. It is hypothesized that these advantageous material properties are a result of the larger grain structure existing in the NiMn alloy film compared to the pure nickel metal film. These properties may make the alloy appropriate for applications such as MEMS thermal electrical switches for telecommunications applications.

MEMS device using NiMn alloy and method of manufacture

A contact electrode for a device is made using an etching process to etch the surface of the contact electrode to form a corrugated contact surface wherein the outer edges of at least one grain is recessed from the outer edges of adjacent grains and is recessed by at least about 0.05 &#x3bc;m from the contact plane. By having such a corrugated surface, the contact electrode is likely to contact another conductor with at least one pure metal grain. This etching treatment reduces contact resistance and contact resistance variability throughout many cycles of use of the contact electrode.

Contact electrode for microdevices and etch method of manufacture

A material for forming a conductive structure for a micromechanical current-driven device is described, which is an alloy containing about 0.025% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower and more stable than the sheet resistance of the pure metal. Accordingly, when used for conductive leads in a photonic device, the leads using the NiMn alloy may provide current to heat the photonic device while generating less heat within the leads themselves, and a more stable output.

Growing community of inventors

Santa Barbara, CA, United States of America

Douglas L Thompson