Kla-tencor Technologies Corporation

Kla Tencor Corporation

Schlumberger Technologies, Inc.

Douglas K Masnaghetti

Gabor D Toth

Gian Francesco Lorusso

Christopher G Talbot

George R Koch

David Lewis Adler

Neil W Richardson

Luca Grella

Amir Azordegan

Eric Munro

Stefano E Concina

Varoujan Chakarian

Waiman Ng

Jeffrey Keister

Stanley S Sun

Hongyu Ximen

Mark Armstrong McCord

Hitoshi Takahashi

Christopher Sears

Fred E Stanke

Scott Allen Young

Richard R Simmons

Mark Allen Neil

Laurence S Hordon

James Daniel Olson

Jeffery Scott Coffer

Michael A Cecere

Sander Josef Gubbens

Embodiments of the present disclosure are directed to an electron beam imaging/inspection apparatus having an electron source device to direct flood electrons on a sample immediately before image acquisition or inspection. The apparatus comprises a first device configured to charge a sample in a first mode, wherein the first device includes an electron source configured to provide a flood beam of charged particles to a first area of the sample. The apparatus also comprises a second device configured to generate a primary beam of electrons and characterize an interaction between the primary beam and a second area of the sample within the first area in a second mode. The apparatus is configured to switch from the first mode to the second mode less than 1 second.

Inspection site preparation

One embodiment pertains to a method for reviewing a potential defect on a substrate from one electron image. An image of an area containing the potential defect is obtained using a charged-particle apparatus. At least three image segments within the image are determined. The three segments are transformably identical to each other, and one of said three segments includes the potential defect. Another embodiment pertains to a method for reviewing a potential defect on a substrate by obtaining an electron-beam image of a relatively large field of view containing a first image segment. The first image segment is substantially smaller than the field of view and includes a location of the potential defect. A comparison image segment within the field of view is determined. The comparison image segment is transformably identical to the first image segment. Other embodiments and features are also disclosed.

Defect review using image segmentation

A particle beam system having a beam source for generating a particle beam and a vacuum air bearing. The beam source is mounted to a first side of the vacuum air bearing, with an active side of the vacuum air bearing disposed on an opposing second side of the vacuum air bearing. The active side is adapted to receive and retain a substrate. A beam port is formed completely through the vacuum air bearing from the first side to the second side. Means are provided for moving the substrate across the second side of the vacuum air bearing and positioning the substrate under the beam port. Means are also provided for sealing an interior of the beam source from exposure to atmosphere through the beam port.

Chamberless substrate handling

without substantially touching the surface, having annular rings forming annular orifices, one of the rings forming an air bearing portion and having passages through which a flow of a gas can be established in a first direction, where the flow of the gas is sufficient to create a cushion of air between the puck and the surface, and at least some of the orifices for drawing vacuums through the orifices in a second direction opposite to the first direction against the surface.

An SEM wherein the entire imaging apparatus of the SEM is supported on air bearings. A multi-stage differentially pumped vacuum seal area provides a localized vacuum zone for wafer examination. A wafer leveling mechanism insures that the top surface of the wafer being examined is placed and maintained in a position level with the surface upon which the air bearing supported SEM rests. The SEM can move on its air bearings such that any portion of the wafer can be examined. A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway. The voltage-isolating passageway includes at least two magnets that are positioned along opposite and exterior surfaces of the passageway. A semi-conductive coating can be applied to the interior passageway surface.

Transverse magnetic field voltage isolator

The disclosure relates to a method and system of electron beam scanning for measurement, inspection or review. In accordance with one embodiment, the method includes a first scan on a region to collect first image data. The first image data is processed to determine information about a feature in the region. A scanning method is selected for imaging the feature. A second scan using the selected scanning method on the feature is then applied to collect second image data.

Method and system for e-beam scanning

One embodiment disclosed relates to a method for automated focusing of an electron image. An EF cut-off voltage is determined. In compensation for a change in the EF cut-off voltage, a focusing condition is adjusted. Adjusting the focusing condition may comprise, for example, adjusting a wafer bias voltage in correspondence to the change in cut-off voltage. Another embodiment disclosed relates to a method for automated focusing of an electron image in a scanning electron imaging apparatus. A focusing condition of a primary electron beam in a first image plane is varied so as to maximize an intensity of a secondary electron beam through an aperture in a second image plane.

Automated focusing of electron image

One embodiment disclosed relates to a Wien filter for a charged-particle beam apparatus. The charged-particle beam is transmitted through the Wien filter in a first direction. A magnetic field generation mechanism is configured to generate a magnetic field in a second direction which is perpendicular to the first direction, and an electrostatic field generation mechanism is configured to generate an electrostatic field in a third direction which is perpendicular to the first and second directions. The field generation mechanisms are further configured so as to have an offset between the positions of the magnetic and electrostatic fields along the first direction. Another embodiment disclosed relates to a Wien filter type device wherein the magnetic force is approximately twice in strength compared to the electrostatic force. Other embodiments are also disclosed.

Wien filter with reduced chromatic aberration

One embodiment disclosed relates to a scanning electron beam apparatus including an objective lens, scan deflectors, de-scan deflectors, an energy-filter drift tube, and a segmented detector. The objective lens may be an immersion lens configured with a high extraction field so as to preserve azimuthal angle discrimination of the electrons scattered from the specimen surface. The de-scan deflectors may be used to compensate for the scanning of the incident electron beam. The energy-filter drift tube is configured to align the scattered electrons according to polar angles of trajectory from the specimen surface.

Apparatus and method for E-beam dark field imaging

The present invention pertains to a technique of electron spectroscopic imaging that is easy to perform and cost effective. This technique allows for spatial resolution enhancement of electron beam semiconductor inspection systems (for example a critical dimension scanning electron microscope CD-SEM) as well as to obtain useful physical or chemical information on the investigated specimen. The technique involves a high pass energy filter that is alternately set, or multiplexed, at two energies. For an inspected area on a specimen, the detected intensity level at the higher energy setting is subtracted from the intensity level at the lower energy setting. The obtained differential value corresponds to electrons having energy within the range of the first and second filter settings. This obtained differential value is used to generate an image of the specimen for inspection purposes.

Energy filter multiplexing

An embodiment of the present invention comprises a SEM wherein the entire imaging apparatus of the SEM is supported on air bearings. A multi-stage differentially pumped vacuum seal area provides a localized vacuum zone for wafer examination. A wafer leveling mechanism insures that the top surface of the wafer being examined is place and maintained in a position level with the surface upon which the air bearing supported SEM rests. In use, wafers being examined are loaded into the wafer leveling mechanism, which places and then holds their top surface flush with an examination table. The SEM is then moved on its air bearings and placed in appropriate position over the wafer. Any portion of the wafer can be examined simply by moving the SEM column in the appropriate direction.

Scanning electron microscope architecture and related material handling system

A method and apparatus for generating an image of a specimen with a scanning electron microscope (SEM) is disclosed. The SEM ( ) has a source unit ( through ) for directing an electron beam ( ) substantially towards a portion of the specimen ( ), a detector ( ) for detecting particles ( ) that are emitted from the specimen ( ), and an image generator ( through ) for generating the image of the specimen ( ) from the emitted particles ( ). The image features are controlled by conditions under which the image is generated. The specimen is scanned under a first set of conditions ( ) to generate a first image during a first image phase ( ). The specimen is then scanned under a second set conditions ( ) during a setup phase ( ). The second set of conditions is selected to control charge on the specimen. The specimen is then scanned under the first set of conditions ( ) to generate a second image during a second image phase ( ). The features of the second image are controlled by the first and second sets of conditions.

Growing community of inventors

San Jose, CA, United States of America

Douglas K Masnaghetti