Murata Manufacturing Co., Ltd.

Other

Resonant, Inc.

Douglas Jachowski

Ventsislav Yantchev

Bryant Garcia

Greg Dyer

Patrick J Turner

Albert Cardona

Gregory L Hey-Shipton

Viktor Plesski

Robert B Hammond

Sean McHugh

Soumya Yandrapalli

Gregory Lynton Hey-Shipton

Jesson John

Sho Nagatomo

Chris O'Brien

Garrett Williams

Wei Yang

Luke Myers

Marie Chantal Mukandatimana

Chris O′Brien

Filter devices are disclosed. A filter device includes a piezoelectric plate comprising a supported portion, a first diaphragm, and a second diaphragm. The supported portion is attached to a substrate and the first and second diaphragms spans respective cavities in the substrate. A first interdigital transducer (IDT) has interleaved fingers on the first diaphragm. A second interdigital transducer (IDT) has interleaved fingers on the second diaphragm. A first dielectric layer is between the interleaved fingers of the first IDT, and a second dielectric layer is between the interleaved fingers of the second IDT. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. The piezoelectric plate and the first and second IDTs are configured such that radio frequency signals applied to first and second IDTs excite primary shear acoustic modes in the respective diaphragms.

Filter device

An acoustic wave device is provided that includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. Moreover, a resonant frequency of the first resonator is lower than that of the second resonator. A thickness of the first resonator portion is greater than that of the second resonator portion, and ts/tp≤ts/tpis satisfied, where tp, tp, ts, and tsare respectively thicknesses of the first and second resonator portions and the first and second dielectric films.

Acoustic wave device

Radio frequency filters are disclosed. A bandpass filter is discloses that includes one first bulk acoustic resonator on a first chip including a first piezoelectric layer having an LN-equivalent thickness less than or equal to 535 nm; a second bulk acoustic resonator on a second chip including a second piezoelectric layer having a thickness greater than the LN-equivalent thickness of the piezoelectric layer on the first chip; and a circuit card coupled to the first chip and the second chip and that electrically connects the first chip to the second chip.

Transversely-excited film bulk acoustic resonator filters with sub-resonators having different mark and pitch

Networks and filters are disclosed. A network includes a resonator that exhibits both a resonance and an anti-resonance and an inverter circuit connected in parallel with the resonator to form a composite resonator. An anti-resonant frequency of the composite resonator is different from the resonator's anti-resonant frequency.

Resonator circuit using an inverter to adjust anti-resonance frequency

A filter includes first and second shunt resonators, at least one series resonator connected to the first and second shunt resonators in a ladder filter circuit, and a first ground contact pad. The first shunt resonator has two or more first sub-resonators and the second shunt resonator has two or more second sub-resonators. At least one first sub-resonator and at least one, but less than all, of the two or more second sub-resonators are connected to the first ground contact pad.

Filter using transversely-excited film bulk acoustic resonators with inductively coupled sub-resonators

Bandpass filters are disclosed. A bandpass filter includes a plurality of series resonators and a plurality of shunt resonators. The series resonators are connected in series between a first port and a second port. The plurality of series resonators includes a first series resonator and a second series resonator connected at a node. The plurality of shunt resonators includes a first shunt resonator coupled between the node and a ground. A capacitor bridges the first and second series resonators.

Bandpass filter with improved upper band edge sharpness

An acoustic resonator device is formed using a sacrificial layer and a front side etched cavity by forming a recess in a silicon substrate with a trap-rich top layer and filling the recess with sacrificial silicon nitride. A bonding oxide (BOX) layer is formed over the trap-rich layer and the sacrificial silicon nitride filled recess and a piezoelectric plate is bonded to the BOX layer. The sacrificial silicon nitride is then removed to form a cavity by using an etchant introduced through holes in the piezoelectric plate and BOX layer without removing the BOX layer from over the cavity.

Substrate processing and membrane release of transversely-excited film bulk acoustic resonator using a sacrificial tub

Radio frequency filters are disclosed. A filter includes a first transversely-excited film bulk acoustic resonator (XBAR) having a first sub-resonator and a second sub-resonator connected in parallel. A pitch of the first sub-resonator is not equal to a pitch of the second sub-resonator and/or a mark of the first sub-resonator is not equal to a mark of the second sub-resonator.

An acoustic resonator is fabricated by bonding a first piezoelectric plate to a substrate and spans locations for a first and second cavity in the substrate. A top surface of the first plate is planarized to a first thickness. A bonding layer is formed on the first piezoelectric plate and spans the first and second cavity locations. A second piezoelectric plate is bonded to the bonding layer and spans the first and second cavity locations. A top surface of the second plate is planarized to a second thickness. A portion of the second piezoelectric plate spanning the second cavity location is etched away to form a first membrane over the first cavity location and a second membrane over the second cavity location. Interdigital transducers are formed on the first and second membranes over the first and second cavity location to form a first and second resonator on the same die.

Growing community of inventors

Santa Cruz, CA, United States of America

Douglas Jachowski