Motorola Corporation

Freescale Semiconductor,inc.

Other

University of Texas System

Douglas J Resnick

David P Mancini

William J Dauksher

Albert Alec Talin

Karen Elizabeth Moore

Steven M Smith

Jeffrey H Baker

William A Johnson

Andy E Hooper

Harland G Tompkins

Hector T Chen

Carlton Grant Willson

Kevin D Cummings

C Joseph Mogab

Kevin J Nordquist

Ngoc V Le

Sandeep Pendharkar

Kathy A Gehoski

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template () is formed having a substrate (), a transparent conductive layer () formed on a surface () of the substrate () by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer () formed on a surface () of the transparent conductive layer (). The template () is used in the fabrication of a semiconductor device () for affecting a pattern in device () by positioning the template () in close proximity to semiconductor device () having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template () is then removed to complete fabrication of semiconductor device ().

Lithographic template and method of formation and use

A direct imprinting process for Step and Flash Imprint Lithography includes providing () a substrate (); forming () an etch barrier layer () on the substrate; patterning () the etch barrier layer with a template () while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer () on the substrate; and performing () an etch to substantially remove the residual layer. Optionally, a patterning layer () may be formed on the substrate () prior to forming the etch barrier layer (). Additionally, an adhesive layer () may be applied () between the substrate () and the etch barrier layer ().

Direct imprinting of etch barriers using step and flash imprint lithography

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template () is formed having a relief structure () and a repaired gap defect () within the relief structure (). The template () is used in the fabrication of a semiconductor device () for affecting a pattern in device () by positioning the template () in close proximity to semiconductor device () having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template () is then removed to complete fabrication of semiconductor device ().

Lithographic template having a repaired gap defect method of repair and use

This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template () is formed having a substrate () and a charge dissipation layer (), and a patterned imageable relief layer, () formed on a surface () of the substrate () using radiation. The template () is used in the fabrication of a semiconductor device () for affecting a pattern in the device () by positioning () the template () in close proximity to semiconductor device () having a radiation sensitive material () formed thereon and applying a pressure () to cause the radiation sensitive material to flow into the relief image present on the template (). Radiation () is then applied through the template () to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template () is then removed to complete fabrication of semiconductor device ().

This invention relates to semiconductor devices, microelectronic devices, microelectromechanical devices, microfluidic devices, photonic devices, and more particularly to a multi-tiered lithographic template, a method of forming the multi-tiered lithographic template and a method for forming devices with the multi-tiered lithographic template. The multi-tiered lithographic template (') is formed having a first relief structure and a second relief structure, thereby defining a multi-tiered relief image. The template is used in the fabrication of a semiconductor device () for affecting a pattern in device () by positioning the template in close proximity to semiconductor device () having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the multi-tiered relief image present on the template. Radiation is then applied through the multi-tiered template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The multi-tiered template is then removed to complete fabrication of semiconductor device ().

Multi-tiered lithographic template and method of formation and use

An alignment mark ( ) is formed on the surface ( ) of a silicon carbide substrate ( ). The alignment mark ( ) is used to reflect a light signal ( ) to determine the proper position for the silicon carbide substrate ( ). The materials that are used to form the alignment mark ( ) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.

Semiconductor device and method of making the same

An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer, formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

Amorphous carbon layer for improved adhesion of photoresist and method of fabrication

A method of contact printing on a device using a partially transparent mask ( ) having first and second surfaces, comprises the steps of applying a layer of low surface energy polymeric material ( ) to the first surface of the mask; placing the first surface ( ) of the mask contiguous to the device ( ), the layer of low surface energy polymeric material being substantially in contact with the device; and applying radiation ( ) to the second surface of the mask for affecting a pattern in the device.

Lithographic printing method using a low surface energy layer

An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

A method of forming a hard mask for use in the formation of a refractory radiation mask including providing a membrane structure, forming a radiation absorbing layer to be patterned on the membrane structure, forming a hard mask layer on the surface of the membrane structure, the hard mask layer including a material system having a nominally zero stress and therefore reduced distortion of the membrane structure, and patterning the hard mask layer.

Low stress hard mask formation method during refractory radiation mask fabrication

A method of contact printing on a device using a partially transparent mask (,) having first and second surfaces, comprises the steps of applying a layer of low surface energy polymeric material (,) to the first surface of the mask; placing the first surface (,) of the mask contiguous to the device (,), the layer of low surface energy polymeric material being substantially in contact with the device; and applying radiation (,) to the second surface of the mask for affecting a pattern in the device.

An alignment mark (51) is formed on the surface (64) of a silicon carbide substrate (50). The alignment mark (51) is used to reflect a light signal (72) to determine the proper position for the silicon carbide substrate (50). The materials that are used to form the alignment mark (51) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.

Method of forming an alignment mark

A process of patterning magnetic multilayer films including the steps of successively depositing a plurality of magnetic multilayer films on a supporting substrate, selectively removing portions of the plurality of magnetic multilayer films using a reactive plasma etch including chlorine gas, and passivating in situ, or an adjacent evacuated chamber, remaining portions of the plurality of magnetic multilayer films, i.e. the memory elements, in a post-etch fluorinated plasma.

Process for patterning magnetic films

A uniform heating fixture and method of use is provided. A heat conductive member having a first plane surface, a second surface and a third plane surface is formed. The first plane surface and the third plane surface are parallel and are connected by a second surface. The third plane surface circumscribes and extends away from the first plane surface, thereby enabling uniform heating of an X-ray mask.

Growing community of inventors

Phoenix, AZ, United States of America

Douglas J Resnick