Viasat, Inc.

Motorola Corporation

Stats Chippac Pte. Ltd.

Douglas J Mathews

Steven James Franson

Kenneth V Buer

Maria Carolina Vigano

David C Wittwer

James F Landers, Jr

James E Mitzlaff

Michael R Lyons

Hugh Robert Malone

Ramanamurthy V Darapu

Qiang Richard Chen

Craig L Fullerton

John L Leicht

Richard Peter Sheridan

Vernon R Scott

Scott D Munier

Mark S Berkheimer

Shih Peng Sun

Brandon C Drake

Gary P English

Eric Gongora

Michele G Oehlerking

An antenna element can include a feed and a radiating element and a dielectric substrate having a first surface and a second surface, the dielectric substrate comprising the feed of the antenna element within the dielectric substrate. The antenna element module can also include an integrated circuit (IC) chip adhered to the first surface the dielectric substrate and coupled to the feed of the antenna element. The IC chip can include a circuit to adjust a signal communicated with the feed. The antenna element module can further include a plastic antenna carrier adhered to the second surface of the dielectric substrate. The plastic antenna carrier can include a body portion comprising a cavity for the radiating element of the antenna element, the radiating element positioned in the cavity of the body portion of the plastic antenna carrier.

Antenna element module

Disclosed is an antenna apparatus including a substrate having a cavity in a first outer surface thereof. The substrate has a sidewall defining a portion of the cavity, and a first edge contact is formed at the sidewall. An IC chip is disposed within the cavity and has a side surface facing the sidewall and a second edge contact formed on the side surface electrically connected to the first edge contact. An antenna element, disposed at a second outer surface of the substrate opposite the first outer surface, is electrically connected to RF circuitry within the IC chip through a conductive via extending within the substrate.

Integrated structures with antenna elements and IC chips employing edge contact connections

A packaged semiconductor chip includes a semiconductor sub strate having formed thereon: radio-frequency (RF) input and output contact pads, DC contact pads, and first and second amplifier stages. An input of the first amplifier stage is coupled with the RF input contact pad. An input and an output of the second amplifier stage are respectively coupled to an output of the first amplifier stage and the RF output contact pad. The DC contact pads and the input of the first amplifier stages are connected via an input bias coupling path. The outputs of the amplifier stages are connected via an output bias coupling path. The chip further includes a lead frame having RF input and output pins electrically coupled to the RF input and output contact pads, and input bias pins electrically coupled to the DC contact pad.

Modularized power amplifier devices and architectures

Disclosed is an antenna apparatus including a first subassembly having a plurality of antenna elements, and a second subassembly adhered to the first subassembly. The second subassembly may include a plurality of components of a beamforming network encapsulated within a molding material. One or more interconnect layers may be disposed on the molding material to electrically couple the plurality of components of the beamforming network to the plurality of antenna elements. Methods of fabricating the antenna apparatus are also disclosed.

Low profile antenna apparatus

A phased array antenna includes an array of antenna element modules. Each of the array of antenna element modules includes a dielectric substrate having a lower surface and a radiating element. Each of the antenna element modules also includes an integrated circuit (IC) chip adhered to the lower surface of the dielectric substrate. The IC chip includes a circuit to adjust a signal communicated with the radiating element. The phased array antenna also includes a multi-layer substrate underlying the array of antenna element modules, the multi-layer substrate including a beam forming network (BFN) circuit formed on a layer of the multi-layer substrate and the BFN circuit is in electrical communication with the IC chip of each of the array of antenna element modules.

Phased array antenna

An integrated circuit package system is provided including mounting a first device on a carrier, mounting a second device over the first device and the carrier in an offset face-to-face configuration, and connecting the first device and the second device at an overlap.

Bridge stack integrated circuit package system

An RF test equipment and wire bond interface circuit (150) for facilitating the on-wafer (100) testing of integrated circuits (120) has an electrical interface (102,104,106), for providing electrical coupling to the IC (120) and a low-pass filter structure connected between the electric interface (102,104,106) and the IC (120). The low-pass filter structure comprises a first inductive element (108) connected in series with the electrical interface (102,104,106) for simulating wire bond reactances, a second inductive element (114) connected in series with the first inductive element (108) for making contact with the IC (120) and at least one capacitor (110,112) connected between ground and a point common to both the first (108) and the second (114) inductive elements, for providing shunt capacitance and defining a Tee type low-pass matched filter at the input (121) and the output (123) of the IC (120). The RF test equipment and wire bond interface (150) assure the on-wafer performance of the IC (120) will correspond to its off-wafer performance, despite the addition of wire bonds (127,129 and 133,135).

RF test equipment and wire bond interface circuit

A non-hermetic, three-dimensional, microwave semiconductor device carrier with integral waveguide couplers is disclosed. A molded plastic substrate having a suitable dielectric constant and varying thicknesses comprises plated conductors and locations for receiving GaAs MMIC's. MMIC's are mounted to a metal backplate and die bonded to the plated conductors. The waveguide couplers are integrally molded as part of the carrier substrate, and comprise plated through cylindrical members. Signals from a waveguide cavity are coupled to the MMIC's by inserting the waveguide couplers into a waveguide port. The carrier and integral waveguide coupler together with a plated molded cover forms a non-hermetic package providing pseudo-shielding cavities about the resident multiple semiconductor GaAs die. Transmission line impedance control is enhanced varying the substrate thickness on a per conductor basis. Frequency of operation exceeds 12 gigahertz.

Three-dimensional microwave circuit carrier and integral waveguide

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Mesa, AZ, United States of America

Douglas J Mathews