Saint-Gobain Ceramics & Plastics, Inc.

Other

Douglas Edwin Ward

Jason Alexander Sherlock

Ronald W Laconto

Long Huy Bui

Nabil Nahas

Stephen Bottiglieri

Ian T Sines

Angela Wamina Kwapong

Mark J Hampden-Smith

Carlijn Lucinde Mulder

Vianney Le Roux

David Solomos

Chun-Lung Kuan

Steven L Robare

A composition suitable for chemical mechanical polishing a substrate can comprise abrasive particles, a multi-valent metal borate, at least one oxidizer and a solvent. The composition can polish a substrate with a high material removal rate and a very smooth surface finish.

Composition and method for conducting a material removing operation

A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.

Fluid composition and method for conducting a material removing operation

A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.

Composition for conducting material removal operations and method for forming same

A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I), bromide (Br), fluoride (F), sulfate (SO), sulfide (S), sulfite (SO), chloride (Cl), silicate (SiO), phosphate (PO), nitrate (NO), carbonate (CO), perchlorate (ClO), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from MF, NF, MNF, MI, NI, MNI, MBr, NBr, MNBr, M(SO), N(SO), MaN(SO), MS, NS, MNS, M(SiO), N(SiO), MN(SiO), M(PO), N(PO), MN(PO), M(NO), N(NO), MN(NO), M(CO), N(CO), MN(CO), or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.

The present disclosure is directed to a fluid composition that can be used in chemical-mechanical polishing processes of inorganic material. The fluid composition can include at least one oxidizing agent and a multivalent cation component. Using the fluid composition during a chemical-mechanical polishing process can facilitate a relatively defect free material surface after polishing while achieving a suitable material removal rate.

Oxidizing fluid for the chemical-mechanical polishing of ceramic materials

A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof, and a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.

Chemical mechanical planarization slurry and method for forming same

A method for cleaning the glass surface of solar panels which employs the use of highly efficient sequestering agents and allows to replace deionized water with municipal or fresh water of up to a very high water hardness, without having a loss in the long term power output of the solar panels.

Method of cleaning solar panels with a composition comprising an organic phosphoric acid or an organic phosphonic acid or salts thereof as sequestrant

The disclosure is directed to a processing fluid including at least 50 wt % of an aliphatic hydrocarbon having an average chain length of 8 to 16 carbons, 0.005 wt % to 10.0 wt % of Lewis active components, and not greater than 1.0 wt % water. The Lewis active components includes a Lewis acid and a Lewis base. The processing fluid has a conductivity of at least 10 nS/m and a Cannon viscosity of about 0.5 cp to about 5 cp at 25&#xb0; C.

Conductive hydrocarbon fluid

A method of machining a workpiece includes applying a fluid between a fixed abrasive component and a workpiece, followed by translation of the fixed abrasive component and the workpiece relative to each other. The fluid contains an anti-clogging agent containing a phosphorus-containing organic chemistry.

Methods for machining inorganic, non-metallic workpieces

A method for machining a ceramic substrate containing Al, including providing a solution containing a phosphorus compound on the ceramic substrate; and machining the substrate with an abrasive.

Methods for machine ceramics

The disclosure is directed to a processing fluid including an aliphatic hydrocarbon component having an average chain length of 8 to 16 carbons and about 0.0001 wt % to about 50.0 wt % of a Lewis active component.

A method for machining a ceramic substrate containing Al, including providing a slurry between a substrate and a machine tool, the slurry containing alumina abrasive and an additive including a phosphorus compound, and moving the substrate relative to the machine tool.

Methods for machining ceramics

CMP formulations for use on nickel/phosphorus alloys comprising abrasive particles and an oxidant, a modifier for the action of the oxidant and first and second accelerants to sequester removed materials containing phosphonate and ammonium or amine groups respectively and optionally an organic carboxylic acid.

Growing community of inventors

Santa Ana, CA, United States of America

Douglas Edwin Ward