Texas Instruments Corporation

Douglas E Paradis

Richard L Guldi

Emily A Groves

Thomas Dyer Bonifield

James Carl Baker

Frank D Poag

Julie S England

Barry Lanier

Charles P Monaghan

Hilario T Trevino

William D Light

Virgil Q Turner

Glenn A Cerny

Wayne Edward Bailey

Sima Salamati-Saradh

Paul C Hashim

Karl Lynn Kenney

Homer K Cheung

One embodiment relates to a computer method for aligning wafers processed in a semiconductor fabrication facility. In the method, a first arrangement of dies having a common functionality level is identified on a first wafer. A first alignment signature is assigned to the first wafer based on the first arrangement. A second arrangement of dies having the common functionality level is identified on a second wafer. A second alignment signature is assigned to the second wafer based on the second arrangement. The first alignment signature is compared to the second alignment signature, and the first and second wafers are selectively aligned based on a result of the comparison. Other systems and methods are also disclosed.

Methods and systems to align wafer signatures

A method of sequencing wafer processing order to minimize sequence correlation in a cyclical two pattern model by generating a set of sequences of wafer identifiers that each specify an order by which one or more fabrication equipments processes wafers of a wafer lot, where the wafer lot contains a number of slots and the fabrication equipments each includes a first subsystem for processing wafers in odd-numbered slots of the first wafer lot and a second subsystem for processing wafers in even-numbered slots of the first wafer lot, and where each of the generated wafer sequences contains exactly a number of wafer identifiers that match the wafer identifiers in every other wafer sequence indexed in the set.

Systems and methods for selecting wafer processing order for cyclical two pattern defect detection

The invention provides a process for evaluating a substrate, such as a wafer of semiconductive material having a semiconductor die at least partially formed thereon, as to the condition of an overlying film, such as an overlying film of photoresist that is applied to the semiconductor die prior to metal etching and ion implantation. The condition of the film is evaluated by exposing at least a portion of the substrate to electromagnetic radiation and evaluating the wave profile of the reflected beam. In instances where it is desirable to evaluate the substrate for the presence or absence or photoresist, ultraviolet, or near ultraviolet light having a wavelength of about 240-650 nm can be used, as such wavelengths are strongly absorbed by photoresist. In contrast, areas of the substrate that are not covered by photoresist will not significantly absorb ultraviolet or near ultraviolet radiation. The presence or absence of the film under study can be evaluated by detecting reflected light from the substrate and comparing the detected light to a known profile. When photoresist films are under evaluation, the profile will feature portions of relatively low amplitude, which correspond to absorption of uv due to the presence of photoresist, and portions of relatively high amplitude, which correspond to non-absorption (reflectance) of uv. While the principles of the invention are applicable to single-point testing of a substrate, it is preferable to undertake a multi-point, and more preferably a continuous scan, of at least a portion of the substrate to minimize the occurrence of possibly erroneous results, as could occur from sampling a portion of the substrate that was deliberately not patterned with the film under study.

Automated substrate pattern recognition system

A method of forming a semiconductor device and the device, the method comprising the steps of providing a silicon substrate of predetermined conductivity type having a layer of silicon oxide with a first mask thereon, implanting a first impurity of the predetermined conductivity type into the substrate in unmasked regions of the substrate, masking the substrate except for a small region immediately adjacent the first mask with a second mask, implanting a second impurity of the predetermined conductivity type into the substrate in the unmasked regions of the substrate to cause some of the impurity to extend in the substrate beneath the first mask, removing the second mask, oxidizing the substrate with the first mask thereon to form a bird's beak extending beneath the first mask with the impurities extending along the bird's beak both beneath and external to the first mask and completing fabrication of a semiconductor device on substrate. The device is a semiconductor device having a silicon substrate of predetermined conductivity type with a semiconductor device structure therein, and a bird's beak region on the substrate wherein the substrate has a higher level of impurity of the predetermined conductivity type along and directly beneath the bird's beak region than in the bulk of the substrate.

Ion implant of the moat encroachment region of a LOCOS field isolation

A system (10, 110, 210) for detecting particles (144) on a surface of a substrate-supporting chuck (14, 114, 214) including an inspection subsystem (128, 130, 131, 116, 250, 252, 222, 216) for analyzing the surface of the chuck (14, 114, 214) to determine if any particles (144) are thereon, a movable table (16, 116, 216) for holding the chuck (14, 114, 214) to inspect it and for moving the chuck (14, 114, 214) during inspection, and a control unit (22, 122, 222) for moving the movable table (16, 116, 216) relative to the inspection subsystem (128, 130, 131, 116, 250, 252, 222, 216) to inspect the surface of the chuck (14, 114, 214) and to produce an indication signal if a particle (144) is detected on the surface of the chuck (14, 114, 214). A method for detecting a particle (114) on a substrate-supporting chuck (14, 114, 214) of photolithography equipment (18, 118) includes the steps of providing an inspection subsystem (128, 130, 131, 116, 250, 252, 222, 216); using a movable table (16, 116, 216) associated with a stepper (18, 118) to move a substrate-supporting chuck (14, 114, 214) relative the inspection subsystem (128, 130, 116, 250, 252, 222, 216), and using the inspection subsystem (128, 130, 131, 116, 250, 252, 222, 216) and movable table (16, 116, 216) to inspect a surface of the substrate-supporting chuck (14, 114, 214) to locate any particles thereon.

System and method for detecting particles on substrate-supporting chucks

A system (12) for delivering spin-on-glass (SOG) to a substrate (14) has a spin chuck (16) for spinning a substrate (14), a delivery nozzle (18, 118, 218, 318, 418) having an interior conduit (419), a delivery nozzle-positioning subsystem (62) coupled to the delivery nozzle (18, 118, 218, 318, 418) for selectively positioning the delivery nozzle (18, 118, 218, 318, 418) over the spin chuck (16) for delivery of SOG, a SOG supply line (60, 160, 360) for supplying SOG, a cleaning fluid supply line (22, 122, 322) for supplying a cleaning fluid used to remove dried SOG, and a valve subsystem (20, 120, 320) fluidly coupled to the SOG supply line (60, 160, 360), cleaning-fluid supply line (22, 122, 322), and delivery nozzle (18, 118, 218, 318, 418) for selectively delivering SOG or a cleaning fluid through the interior conduit (419) of the delivery nozzle (18, 118, 218, 318, 418). A cleaning station 466 may be used to clean an exterior (421) of the nozzle (18, 118 218, 318, 418). A method for applying SOG to a substrate (14) through a delivery nozzle (18, 118,218,318,418) and for cleaning the delivery nozzle (18, 118, 218, 318, 418) includes the steps of delivering SOG to the substrate (14) and cleaning the nozzle (18, 118, 218, 318, 418) when cleaning is desirable by among other things delivering a cleaning fluid from a cleaning fluid supply line (22, 122, 322) through the valve subsystem (20, 120, 320) to the interior conduit (419) of the delivery nozzle (18, 118, 218, 318, 418) to remove any SOG from the interior conduit (419).

System and method for cleaning nozzle delivering spin-on-glass to

Methods and apparatus are providing for cleansing contaminants from substrates, such as semiconductor wafer handling implements, and thereby reduce the incidence of contamination of semiconductor devices being assembled upon the semiconductor wafers. In one aspect of the invention, a substrate such as a semiconductor cassette or other semiconductor wafer handling implement, is inserted into a chamber that is substantially isolated from a surrounding environment. A pressurized, and optionally purified, cleansing medium is directed against at least one surface of the substrate to dislodge contaminants from the substrate surface. Dislodged contaminants are evacuated with negative pressure from the chamber. In a preferred aspect of the invention, the cleansing medium is an inert gas, such as nitrogen, and is applied to the substrate at a pressure from about 10 p.s.i. to about 100 or more p.s.i. The chamber can be provided with sidewalls define a convergent evacuation path that is in fluid communication with an exhaust stream, such as the exhaust stack of the manufacturing facility.

Enhanced high pressure cleansing system for wafer handling implements

The invention provides a process for evaluating a substrate, such as a wafer of semiconductive material having a semiconductor die at least partially formed thereon, as to the condition of an overlying film, such as an overlying film of photoresist that is applied to the semiconductor die prior to metal etching and ion implantation. The condition of the film is evaluated by exposing at least a portion of the substrate to electromagnetic radiation and evaluating the wave profile of the reflected beam. In instances where it is desirable to evaluate the substrate for the presence or absence of photoresist, ultraviolet or near ultraviolet light having a wavelength of about 240-650 nm can be used, as such wavelengths are strongly absorbed by photoresist. In contrast, areas of the substrate that are not covered by photoresist will not significantly absorb ultraviolet or near ultraviolet radiation. The presence or absence of the film under study can be evaluated by detecting reflected light from the substrate and comparing the detected light to a known profile. When photoresist films are under evaluation, the profile will feature portions of relatively low amplitude, which correspond to absorption of uv due to the presence of photoresist, and portions of relatively high amplitude, which correspond to non-absorption (reflectance) of uv. While the principles of the invention are applicable to single-point testing of a substrate, it is preferable to undertake a multi-point, and more preferably a continuous scan, of at least a portion of the substrate to minimize the occurrence of possibly erroneous results, as could occur from sampling a portion of the substrate that was deliberately not patterned with the film under study.

Method and apparatus for verifying the presence of a material applied to

Methods are providing for cleansing contaminants from substrates, such as semiconductor wafer handling implements, and thereby reduce the incidence of contamination of semiconductor devices being assembled upon the semiconductor wafers. In one aspect of the invention, a substrate such as a semiconductor cassette or other semiconductor wafer handling implement, is inserted into a chamber that is substantially isolated from a surrounding environment. A pressurized, and optionally purified, cleansing medium is directed against at least one surface of the substrate to dislodge contaminants from the substrate surface. Dislodged contaminants are evacuated with negative pressure from the chamber. In a preferred aspect of the invention, the cleansing medium is an inert gas, such as nitrogen, and is applied to the substrate at a pressure from about 10 p.s.i. to about 100 or more p.s.i. The chamber can be provided with sidewalls define a convergent evacuation path that is in fluid communication with an exhaust stream, such as the exhaust stack of the manufacturing facility. A method of monitoring contaminant particle count and contaminant concentration which can be used to control the pressurized cleansing medium.

Enhanced cleansing process for wafer handling implements

A hybrid semiconductor device which comprises a semiconductor substrate having electrical devices therein with a plurality of spaced apart relatively rigid standoffs of electrically insulating material disposed over the substrate. Each of the standoffs has a substantially planar exposed surface remote from the substrate. A first layer of electrically insulating material more resilient than the standoffs is disposed over the substrate and between the standoffs and has an upper surface coplanar with the planar exposed surfaces of the standoffs. A semiconductor superstrate is secured to the first layer of electrically insulating material, the superstrate containing electrical devices. A connection connects the electrical devices contained in the superstrate to the electrical devices in the substrate.

Hybrids semiconductor circuit

A method of making a hybrid semiconductor device and the device comprising providing a semiconductor substrate having electrical devices therein, providing a first resilient layer of electrically insulating material over the substrate which can be disposed directly onto the substrate with a substantially planar exposed surface, providing a second resilient layer of electrically insulating material over the first resilient layer which can be disposed directly onto the first layer with a substantially planar exposed surface, the second layer having a relatively resilient state and a rigid state, providing resilient standoff from the third resilient layer at spaced locations on the second layer by removing predetermined portions of the third layer, securing a semiconductor superstrate to the semiconductor device, forming electrical devices on the superstrate, and then connecting the electrical devices on the superstrate to the electrical devices on the substrate.

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Richardson, TX, United States of America

Douglas E Paradis