Macom Technology Solutions Holdings, Inc.

Douglas Carlson

Timothy Edward Boles

Anthony Kaleta

Wayne Mack Struble

Mihir S Patel

Rathnait Long

Thomas A Winslow

An acoustic wave resonator has a first conductive layer, piezoelectrical material formed over the first conductive layer, and second conductive layer formed over the piezoelectric material. An alignment of the first conductive layer, piezoelectric material and second conductive area defines an active region of the resonator and the active region includes a core area and a plurality of fractals extending from or recessed into the core area. The fractals maximize a perimeter-to-area ratio of the active region of the resonator. The fractals increase electromechanical coupling and a quality factor of the resonator. The fractals can have a star shape, rounded shape, asymmetric shape, or other shape that optimizes the perimeter-to-area ratio of the active region to maximize performance of the resonator. A frame can be disposed over or within the piezoelectric material. The frame is raised above the second conductive layer or recessed below the second conductive layer.

Semiconductor device and method of forming high Khigh Q acoustic wave resonator

Various aspects of Schottky diodes are described. The diodes are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter in some cases among other aspects. In one example, a Schottky diode includes a conduction layer, a first layer over the conduction layer, a second layer over the first layer, a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer, and an anode over the second layer between the first cathode and the second cathode. The first cathode and the second cathode can be electrically connected to each other as a cathode of the Schottky diode.

Lateral Schottky diode

Various integrated circuits formed using gallium nitride and other materials are described. In one example, an integrated circuit includes a first integrated device formed over a first semiconductor structure in a first region of the integrated circuit, a second integrated device formed over a second semiconductor structure in a second region of the integrated circuit, and a passive component formed over a third region of the integrated circuit, between the first region and the second region. The third region comprises an insulating material, which can be glass in some cases. Further, the passive component can be formed over the glass in the third region. The integrated circuit is designed to avoid electromagnetic coupling between the passive component, during operation of the integrated circuit, and interfacial parasitic conductive layers existing in the first and second semiconductor structures, to improve performance.

Microwave integrated circuits including gallium-nitride devices on silicon

High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.

High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current

High-voltage lateral GaN-on-silicon Schottky diode

High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.

High-voltage GaN high electron mobility transistors with reduced leakage current

High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.

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Lowell, MA, United States of America

Douglas Carlson