International Business Machines Corporation

Douglas C Latulipe, Jr

Sampath Purushothaman

Fuad Elias Doany

Jane M Shaw

Naftali Eliahu Lustig

Harold John Hovel

Alessandro Cesare Callegari

David Earle Seeger

Douglas Andrew Buchanan

Andrew T Pomerene

Donis G Flagello

Howard M Clearfield

Fredric D Bailey

Christopher M Scherpereel

Christina M Knoedler

The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

Diamond-like carbon films from a hydrocarbon helium plasma

The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

A process for the fabrication of a vertically differentiated semiconductor structure is disclosed. In this process the semiconductor structure is covered with a vertical erosion control mask. The control mask covering at least one horizontal surface of the semiconductor structure is removed leaving the vertical surface covering intact. An isotropic etching of the uncovered horizontal surface next occurs. Finally, the control mask covering of the vertical surface of the semiconductor structure is removed. This process permits etching treatment of horizontal surface defects without adverse effect on the vertical surface of the semiconductor structure.

Process for preparing a vertically differentiated transistor device

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Danbury, CT, United States of America

Douglas C Latulipe, Jr