International Business Machines Corporation

Cytec Technology Corporation

Cytec Industries Inc.

Cytec Industrial Inc.

Douglas Adam Cywar

Frank Daniel Egitto

Gerald Walter Jones

Charles Robert Davis

Thomas P Duffy

Matthew Taylor

Paul Joseph Hart

Edward P McLeskey

Roderick Glyn Ryles

Elizabeth F Foster

Stephen L Tisdale

Haunn-Lin Tony Chen

Lei Zhang

Morris E Lewellyn

Frank Kula

Don H Hess

Dannon Stigers

Airong Song

Chester J Calbick

Christian Lalonde

Melvyn Holdsworth

Matthew J Davis

Silicon containing polyamine scale inhibitors derived from poly(primary amine)s are disclosed. The scale inhibitors can be used to reduce siliceous scale formation in industrial process streams such as alumina recovery process streams, nuclear waste streams and kraft paper mill effluent streams.

Scale inhibitor compositions and methods of using

Methods for reducing aluminosilicate containing scale in a Bayer process involving treating a Bayer process equipment surface with a scale inhibiting composition having high ionic strength prior to exposure to a Bayer process stream.

Method of reducing scale in the bayer process

Methods of preparing an acrylic polymer according to the present invention comprise the steps of: forming a gelled polymer by polymerizing a mixture containing an acrylic monomer and a photoinitiator; comminuting the gelled polymer to produce gel particles; and irradiating the gel particles with light to decompose the photoinitiator, simultaneously with, or after, the step of comminuting. The gel particles may be irradiated with UV light while they are being dried in a fluid-bed dryer.

Process for the preparation of polymers having low residual monomer content

The method for forming circuitization of the present invention provides a circuitized product which does not have a blanket seed layer and only has seed layer under the metal circuitization. Thus, short circuits between circuit lines are eliminated. It is a further advantage of the method of the present invention that it does not involve stripping portions of the seed layer. The method of the present invention requires less processing steps than conventional methods and employs positive resists which are developable by aqueous alkaline solutions. Specifically, the method of the present invention for forming circuitization in a circuit board comprising the following steps: providing a dielectric substrate; applying a positive photoresist to the dielectric substrate; then exposing the positive resist through art work corresponding to the desired circuit pattern; then developing the resist with an aqueous alkaline solution to form the circuit pattern in the resist; then applying a seeding composition to the patterned substrate of step d; exposing the remaining resist to actinic radiation; developing the remaining acidified resist with an aqueous alkaline solution to remove photoresist not coated with seed to form a seed pattern; and then electrolessly plating metal onto the seed pattern so as to form the metallized circuit pattern.

Method for pattern seeding and plating of high density printed circuit boards

The present invention provides a method of ablative photodecomposition and forming metal pattern which attains high resolution, is convenient, and employs non-halogenated solvents. The present invention is directed to a process for forming a metal pattern, preferably circuitization on an organic substrate, preferably on a circuit board or component thereof, which comprises coating the substrate with an ablatively-removable coating comprising a polymer resin preferably an acrylate polymer resin and preferably an ultraviolet absorber. A pattern is formed in the polymer coating corresponding to the desired metal pattern by irradiating at least a portion of the polymer coating with a sufficient amount of ultraviolet radiation to thereby ablatively remove the irradiated portion of the polymer coating. Next the patterned substrate is coated with a conductive metal paste to define the metal pattern, and the conductive metal paste is cured. The remaining polymer coating is removed by solvent stripping with nonhalogenated solvents. The present invention further includes patterning electronic structures comprising multilayer circuitry using the above method. An excimer laser is used to form vias or through holes in the electronic structure while simultaneously patterning the polymer coating. This results in perfect alignment between the pattern formed in the polymer coating and the vias or through holes. High resolution circuitry is thus attainable when the electronic structure is subsequently metallized with a conductive metal paste.

High density template: materials and processes for the application of

The present invention provides a method of ablative photodecomposition and forming metal pattern which attains high resolution, is convenient, and employs non-halogenated solvents. The present invention is directed to a process for forming a metal pattern, preferably circuitization on an organic substrate, preferably on a circuit board or component thereof, which comprises coating the substrate with an ablatively-removable coating comprising a polymer resin preferably an acrylate polymer resin and preferably an ultraviolet absorber. A pattern is formed in the polymer coating corresponding to the desired metal pattern by irradiating at least a portion of the polymer coating with a sufficient amount of ultraviolet radiation to thereby ablatively remove the irradiated portion of the polymer coating. Next the patterned substrate is coated with a conductive metal paste to define the metal pattern, and the conductive metal paste is cured. The remaining polymer coating is removed by solvent stripping with non-halogenated solvents. The present invention further includes patterning electronic structures comprising multilayer circuitry using the above method. An excimer laser is used to form vias or through holes in the electronic structure while simultaneously patterning the polymer coating. This results in perfect alignment between the pattern formed in the polymer coating and the vias or through holes. High resolution circuitry is thus attainable when the electronic structure is subsequently metallized with a conductive metal paste.

High density pattern template: materials and processes for the

The present invention provides a process for rendering acrylic based negative photoresists resistant to hot alkaline permanganate etchant and the iron chloride etchant and for improving the adhesion of the photoresist to the substrate, yet does not require halogenated reagents to develop or strip the photoresist. It has been discovered that the degradation of acrylic based negative photoresists by the permanganate etchant may be overcome by exposing an imaged acrylic based negative photoresist to select wavelengths of actinic radiation either ultraviolet light that is rich in deep UV, about 254 nm wavelength; or infrared radiation from about 2.4 to about 8 microns. Where UV radiation is used, the photoresist is then baked to reduce undercutting of the photoresist. Thereafter, the photoresist is stripped using nonhalocarbon solvents.

Process for manufacturing metalized ceramic substrates

Growing community of inventors

Danbury, CT, United States of America

Douglas Adam Cywar