Rayvio Corporation

Douglas A Collins

Yitao Liao

Li Zhang

Faisal Sudradjat

Robert S West

Robert C Walker

Saijin Liu

Wei Zhang

Theodore J De Jony

Elaine Taylor

Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.

Pixel array of ultraviolet light emitting devices

Embodiments of the invention include a light emitting diode including a semiconductor structure including an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. A first metal layer is in direct contact with the p-type region. A second metal layer is in direct contact with the n-type region. The first and second metal layers are both formed on a first side of the semiconductor structure. A transparent optic is optically coupled to a major surface of the light emitting diode.

Package for ultraviolet emitting devices

Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A transparent encapsulant is disposed over the UVLED. The transparent encapsulant has an angled sidewall.

Ultraviolet emitting device with shaped encapsulant

Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Ultraviolet disinfection system

A variety of applications for UV LEDs that are integrated into a system are described, where the UV light is used for disinfection of air or surfaces, or used to detect the scattering light by particles, or used for skin treatment. In one embodiment, a ceiling luminaire includes a sensor for detecting the presence of people in the room. The luminaire contains a first set of LEDs for generating white light, for illumination, and a second set of LEDs for generating UV light for disinfecting the room. When the sensor detects that no people are in the room, the system automatically controls the UV LEDs to turn on to disinfect the room. The white light LEDs may be independently controlled with a dimmer.

Luminaire with white light LEDs and UV LEDs for lighting and disinfection

In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.

Ultraviolet light emitting device doped with boron

Embodiments of the invention include a vessel having an opening and a detachable cover for covering the opening. The cover includes a semiconductor device with an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The cover also includes a sensor for detecting whether the cover is covering the opening.

An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

Semiconductor device and a method of making a semiconductor device

White light LEDs and UV LEDs in same luminaire for lighting and disinfection

Embodiments of the invention include an ultraviolet (UV) source, the UV source including a semiconductor device comprising an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. A reflector cup is disposed around the UV source. A transparent cover is disposed over the reflector cup.

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Hayward, CA, United States of America

Douglas A Collins