Axcelis Technologies, Inc.

Varian Semiconductor Equipment Associates, Inc.

Douglas A Brown

Peter Lawrence Kellerman

Shu Qin

David Tao

Mathias Koch

Ali Shajii

Kwun-Wing W Cheung

Hossein Zarrin

Ernie Allen

Victor M Benveniste

Svetlana Radovanov

Kourosh Saadatmand

Robert D Rathmell

Robert David Meadows

Charles M McKenna

Andrew M Ray

Edward W Bell

Nicholas R White

Mehran Asdigha

The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights

The present invention is directed to a semiconductor thermal processing system and an apparatus for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a semiconductor thermal processing system and associated apparatus and method are disclosed which provides a segmented cold plate situated within a process chamber, wherein a plurality of segments of the cold plate are operable to radially translate between an engaged position and a disengaged position, wherein a substrate holder may pass between the plurality of segments when the segments are in the disengaged position. According to another aspect, an elevator is operable to linearly translate a substrate residing on a substrate holder between a heating position proximate to a heater assembly and a cooling position proximate to the segmented cold plate. According to another aspect, the cold plate comprises a plurality of holes through which one or more gases may flow, wherein an amount or mixture of the one or more gases is controllable via a controller, and wherein one or more temperature sensors are operable to provide temperature feedback at the substrate. According to another aspect the substrate resides within close proximity to the cold plate, wherein when gas is flowed through the holes, the substrate is cooled in the viscous regime, and the amount and/or mixture of gases flowed through the holes is controlled, based, at least in part, on the one or more measured temperatures.

Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling

The present invention is directed to a semiconductor processing apparatus and a method for clamping a semiconductor substrate and controlling a heat transfer associated therewith. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides a controlled and uniform heat transfer coefficient across a surface thereof. The multi-polar electrostatic chuck comprises a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps is uniform and associated with a mean free path of the cooling gas therein. The electrostatic chuck is permits a control of a backside pressure of a cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas. The plurality of protrusions further provide a uniform contact surface, wherein a contact conductivity between the plurality of protrusions and the substrate is controllable and significantly uniform across the substrate.

MEMS based multi-polar electrostatic chuck

An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.

Ion implanter having two-stage deceleration beamline

The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask and profiler/sensor is employed to obtain beamlets from the incoming ion beam and then to measure beam current at a number of vertical positions. These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.

Device and method for measurement of beam angle and divergence

The present invention is directed to a method of forming a clamping plate for a multi-polar electrostatic chuck. The method comprises forming a first electrically conductive layer over a semiconductor platform and defining a plurality of portions of the first electrically conductive layer which are electrically isolated from one another. A first electrically insulative layer is formed over the first electrically conductive layer, the first electrically insulative layer comprising a top surface having a plurality of MEMS protrusions extending a first distance therefrom. A plurality of poles are furthermore electrically connected to the respective plurality of portions of the first electrically conductive layer, wherein a voltage applied between the plurality of poles is operable to induce an electrostatic force in the clamping plate.

Method of making a MEMS electrostatic chuck

The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides heating or cooling of a substrate by thermal contact conduction between the electrostatic chuck and the substrate. The multi-polar electrostatic chuck includes a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a surface roughness of the plurality of protrusions is less than 100 Angstroms. The electrostatic chuck further includes a voltage control system operable to control a voltage applied to the electrostatic chuck to thus control a contact heat transfer coefficient of the electrostatic chuck, wherein the heat transfer coefficient of the electrostatic chuck is primarily a function of a contact pressure between the substrate and the plurality of protrusions.

MEMS based contact conductivity electrostatic chuck

The present invention is directed to a pyrometer system and comprises an elevator tube. The elevator tube comprises an inner tube and an outer tube surrounding the inner tube in telescoping arrangement and extending from a top to a bottom thereof, the arrangement defining a fluid passageway therebetween. The elevator tube further comprises a port associated with the outer tube that is operable to transmit a cooling gas therethrough into the fluid passageway. A pyrometer head is coupled to the bottom of the inner tube and is operable to transmit and receive radiation through the inner tube. The system further comprises a spider collar coupled to at least one of a top of the inner tube or outer tube, and is operable to support a work piece for thermal measurement thereof.

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S. Hamilton, MA, United States of America

Douglas A Brown