Samsung Electronics Co., Ltd.

Doug-Yong Sung

Woong Ko

Vasily Pashkovskiy

Ohyung Kwon

Se-jin Oh

Ki-ho Hwang

Jae-Hoon Kim

Jung-Hyun Cho

Kyung-Sun Kim

Dong-soo Lee

Namjun Kang

Sung-ho Jang

Ji-Hee Kim

Hak-Young Kim

Dong-Ok Shin

Seong-Chul Choi

Byeong-hee Kim

Ji-Myoung Lee

Kyeong-Seok Jeong

An electrostatic chuck assembly includes a dielectric plate having an absorption electrode to generate an electrostatic force, the dielectric plate securing a substrate by the electrostatic force, a conductive base plate under the dielectric plate to be applied with a high frequency electric power, the conductive base plate being an electrode to generate plasma, and an insulating plate under the base plate, the insulating plate having an insulation body and an insulation sink, and the insulation sink having a dielectric constant lower than that of the insulation body.

Electrostatic chuck and plasma apparatus for processing substrates having the same

Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.

Microwave probe, plasma monitoring system including the microwave probe, and method for fabricating semiconductor device using the system

A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

Plasma processing device

A diagnosis system for pulsed plasma includes an optical emission sensor (OES) to receive light generated the pulsed plasma, the pulsed plasma having been generated in accordance with a pulse signal, a digitizer to synchronize the electrical signal with the pulse signal, and an analyzer to analyze the synchronized electrical signal.

Diagnosis system for pulsed plasma

A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network.

Pulse plasma apparatus and drive method thereof

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Seoul, South Korea

Doug-Yong Sung