Samsung Electronics Co., Ltd.

Pusan National University

Doug Yong Sung

Seung Bo Shim

Yun Kwang Jeon

Se Jin Oh

Kul Inn

Peter Byung H Han

Yong Woo Lee

Sung Ho Jang

Ki Ho Hwang

Jong Woo Sun

Young Jin Noh

Jung Pyo Hong

Cheon Lee

Masato Horiguchi

Protopopov Vladimir

Ji Soo Im

Hak Young Kim

Hyeong Mo Kang

Sang Min Jeong

Yong Ho Lim

Hwa Jun Jung

Ju Ho Lee

Ho-Jun Lee

Tae-yong Kwon

Nam Kyun Kim

Jee Hun Jeong

Sung Hwan Cho

Ju-Hong Cha

Myung Sun Choi

Seung Han Baek

Nam Jun Kang

Jae Ik Kim

Yu Sin Kim

Kyung Chun Lim

Tae Kyun Kang

Chan Bin Mo

Kyung Hyun Han

Seung Bin Ahn

Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Plasma processing equipment

A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.

Plasma etching apparatus and method for operating the same

An inductively coupled plasma processing apparatus includes a lower chamber providing a space for a substrate, a high-frequency antenna that generates inductively coupled plasma in the lower chamber, dielectric windows disposed between the lower chamber and the high-frequency antenna, metal windows alternatingly disposed between the dielectric windows, and gas inlet pipes disposed in each of the metal windows, wherein each of the gas inlet pipes includes nozzles that introduce gases to the lower chamberamber.

Inductively coupled plasma processing apparatus

An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

Apparatus for monitoring process chamber

A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.

Semiconductor manufacturing device and method of operating the same

A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

Plasma processing apparatus

A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.

Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same

Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.

Etching apparatus and method for semiconductor device

Growing community of inventors

Seoul, South Korea

Doug Yong Sung