Motorola Corporation

Freescale Semiconductor,inc.

Doug J Resnick

David P Mancini

William J Dauksher

Steven M Smith

Kevin J Nordquist

Jaime A Quintero

Laura Popovich

Kathleen Ann Gehoski

A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate having a surface, an amorphous carbon layer, formed overlying the surface of the substrate, and a low surface energy material layer overlying the surface of the substrate. The device is formed by providing a substrate having a surface, depositing a low surface energy material layer and an amorphous carbon layer overlying the surface of the substrate adjacent the low surface energy material layer using plasma enhanced chemical vapor deposition (PECVD) or sputtering.

Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication

An improved and novel method of forming a tiered structure, such as a T-gate structure, including the fabrication of a stabilized resist layer that provides for the prevention of interlayer intermixing with the deposition of subsequent resist layers. The method includes patterning a base resist layer to provide for an opening which will form the stem of the tiered structure and subsequently stabilizing the resist base layer without deforming the stem opening. Next, a resist stack is deposited on an uppermost surface of the stabilized resist layer. Patterning the resist stack provides for an opening on an uppermost layer or portion, and a reentrant profile in a portion of the resist stack adjacent the stabilized resist layer. Metallization and subsequent removal of the resist layers results in a tiered structure, such as a T-gate structure, formed using only low to medium molecular weight, linear polymeric materials such as those used in positive optical resists in optical lithography.

Method of fabricating a tiered structure using a multi-layered resist stack and use

The lithographic template is formed having a substrate, an optional etch stop layer formed on a surface of the substrate, and a patterning layer formed on a surface of the etch stop layer. The template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor device having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template is then removed to complete fabrication of the semiconductor device.

Lithographic template and method of formation and use

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( ) is formed having a substrate ( ) and a template pedestal ( ) having formed thereon an uppermost surface an etched pattern or relief image ( ). The template ( ) is used in the fabrication of a semiconductor device ( ) for affecting a pattern in the device ( ) by positioning the template ( ) in close proximity to semiconductor device ( ) having a radiation sensitive material ( ) formed thereon and applying a pressure ( ) to cause the radiation sensitive material ( ) to flow into the relief image ( ) present on the template ( ). Radiation ( ) is then applied through the template ( ) so as to further cure portions of the radiation sensitive material ( ) and further define the pattern in the radiation sensitive material ( 0). The template ( ) is then removed to complete fabrication of semiconductor device ( ).

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( ) is formed having a substrate ( ), an optional etch stop layer ( ) formed on a surface ( ) of the substrate ( ), and a patterning layer ( ) formed on a surface ( ) of the etch stop layer ( ). The template ( ) is used in the fabrication of a semiconductor device ( ) for affecting a pattern in device ( ) by positioning the template ( ) in close proximity to semiconductor device ( ) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template ( ) is then removed to complete fabrication of semiconductor device ( ).

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Phoenix, AZ, United States of America

Doug J Resnick