Rca Inc.

Dorothy M Hoffman

Joseph Thomas McGinn

Bernard Halon

Frederick J Tams, Iii

A process of forming an epitaxial metal silicide layer on a silicon substrate is disclosed. A thin layer of a first metal that will form an oxide in preference to silicon is initially deposited on the substrate. A preferred first metal is titanium. A layer of palladium, platinum or iridium is deposited thereover. An exceptionally uniform, conductive layer of metal silicide is thereby formed by epitaxial growth without the necessity of a high temperature anneal. The disclosed process is particularly useful in forming ultra thin metal silicide Schottky barriers in devices such as infrared imaging arrays.

Epitaxial metal silicide layers

An improved method of forming layers of silicon dioxide on a substrate whereby high quality films are prepared at ambient temperature. The films are formed by electron beam evaporation in the presence of oxygen containing water vapor.

Deposition of silicon dioxide

A method for the deposition of thin films on semiconductor devices is disclosed which utilizes electron-beam induced evaporation techniques. A shield device is included for preventing high energy particles, resulting from the use of the electron-beam, from reaching the semiconductor devices being coated.

Process for radiation free electron beam deposition

A method of forming an adherent pinhole free aluminum film on a pyroelectric and/or piezoelectric substrate comprising heating said substrate to from about 150.degree. C. to about 350.degree. C. at a pressure of from about 1.times.10.sup.-4 Torr to about 1.times.10.sup.-6 Torr for a sufficient time to desorb any gas molecules on the surface on said substrate, cooling said substrate with dry oxygen to about 125.degree. C. at a pressure of about 1.times.10.sup.-4 Torr and thereafter, terminating the flow of oxygen and further reducing the pressure to about 1.times.10.sup.-5 Torr or lower and evaporating an aluminum film on said substrate.

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Titusville, NJ, United States of America

Dorothy M Hoffman