Research Triangle Institute

Mcnc

Micross Advanced Interconnect Technology LLC

Other

Northern Telecom Limited

Dorota Temple

Erik Paul Vick

Arnold Reisman

Christopher Andrew Bower

Mark Windsor Roberson

Scott Goodwin

John Lewis

Dean Michael Malta

William Devereux Palmer

Brian Rhys Stoner

David Dausch

Robert T Croswell

Iwona Turlik

Ethan Klem

Charles Kenneth Williams

Garry Brian Cunningham

Kristin Hedgepath Gilchrist

John M Lannon, Jr

Eric Paul Vick

Darrell L Simpson

C Kenneth Williams

Jay Lewis

Matthew R Lueck

A corrosion sensor system includes one or more corrosion sensors embedded in a coating material such as an anti-corrosion coating material. Each corrosion sensor may include a resonator disposed on a dielectric substrate, and has a resonant frequency in a radio frequency (RF) range or an infrared (IR) range, and is configured for interacting with an RF or IR excitation signal to produce an RF or IR measurement signal. The corrosion sensor system may be applied to an object for which corrosion is to be monitored. A corrosion detection system includes a data acquisition system that transmits the excitation signal to the corrosion sensor, and receives the measurement signal from the corrosion sensor for analysis to determine whether corrosion has occurred.

Detection of corrosion using dispersed embedded sensors

An electronic package includes an adhesion layer between a first substrate and a second substrate. The adhesion layer is patterned to define openings aligned with through-substrate interconnects and corresponding bond pads. A conductive plane is formed between the first substrate and the second substrate, adjacent to the adhesion layer.

Electronic packages with three-dimensional conductive planes, and methods for fabrication

A flexible electronic assembly includes a flexible current-carrying device, an electrically insulating flexible substrate, and an electronic device embedded in the substrate. The electronic device is mounted face-down on the current-carrying device such that a contact side or component side of the electronic device faces the current-carrying device and is positioned at an interface between the current-carrying device and the substrate. The current-carrying device, substrate, and electronic device are co-planar at the interface. This configuration enables the flexible electronic assembly to have an ultra-thin thickness, for example on the order of micrometers.

Flexible electronic assemblies with embedded electronic devices and methods for their fabrication

An electronic device includes a substrate including a front side, a back side, a thickness between the front side and back side, one or more front-side vias extending from the front side into a part of the thickness, and an interconnect via extending from the back side toward the front side; a contact pad on the front side and including one or more protrusions extending through corresponding front-side vias and into the interconnect via; and an interconnect extending through the interconnect via and into contact with the protrusion(s).

Electronic devices utilizing contact pads with protrusions and methods for fabrication

A three-dimensional interconnect includes a first substrate bonded to a second substrate, the first substrate including a device layer and a bulk semiconductor layer, a metal pad disposed on the second substrate, an electrically insulating layer disposed between the first and second substrates. The structure has a via-hole extending through the device layer, the bulk semiconductor layer and the electrically insulating layer to the metal pad on the second substrate. The structure has a dielectric coating on a sidewall of the via-hole, and a plasma-treated region of the metal pad disposed on the second substrate. The structure includes a via metal monolithically extending from the plasma-treated region of the metal pad through the via-hole and electrically interconnecting the device layer of the first substrate to the metal pad of the second substrate.

Three dimensional interconnect structure and method thereof

A detector array and method for making the detector array. The array includes a substrate including a plurality of trenches formed therein, and includes a plurality of collectors electrically isolated from each other, formed on the walls of the trenches, and configured to collect charge particles incident on respective ones of the collectors and to output from said collectors signals indicative of charged particle collection. The array includes a plurality of readout circuits disposed on a side of the substrate opposite openings to the collectors. The readout circuits are configured to read charge collection signals from respective ones of the plurality of collectors.

Faraday cup array integrated with a readout IC and method for manufacture thereof

An electronic package and method and system for forming the electronic package. The electronic package has a first substrate including a first electronic device and including through-holes extending through an entire thickness of the first substrate. The electronic package has a second substrate bonded to the first substrate, metallizations formed in the through-holes of the first substrate to connect to components of the first electronic device, and a patternable substance disposed between the first substrate and the second substrate and adhering the first substrate and the second substrate together in regions apart from the metallizations. The method and system form through-holes extending through an entire thickness of the first substrate, deposit and pattern an adherable substance on the second substrate in a pattern having openings which expose connections for a second electronic device of the second substrate, align and attach the first substrate and the second substrate together, and form metallizations in the through-holes to connect to the connections for the second electronic device.

Die bonding utilizing a patterned adhesion layer

The present invention provides for an improved polarized-light detector device. The device comprises a photodiode having a first contact disposed on the backside of a light-sensing medium and a second contact disposed on the frontside of the light-sensing medium. A spin filter medium is disposed between the backside of the light-sensing medium and the first contact. The application of a magnetic field aligns the magnetic moments in the spin-filter medium to cause the device to discriminate between different polarizations of an optical signal. The polarization discrimination is affected by introducing a net magnetization into the spin filter medium, thereby allowing selected spin-polarized electrons to either be transmitted through the spin filter medium to the point of detection or deflected from further transmission. Additionally, the invention is embodied in a polarization-selective-light detector array and methods for discriminating a polarized optical signal and selective optical wavelength detection.

High sensitivity polarized-light discriminator device

A current regulator controls the electron emission from a cold cathode using closed-loop feedback from a current sensor in the cathode connection. The regulator circuit includes a cold cathode, a current-sensing element, a current-limiting element, and current-control element. Additionally, the closed-loop current regulator may comprise a reference element for generating the reference level, a circuit power supply and a cathode bias supply. The regulator and cathode may be assembled from separate components, or the entire circuit may be integrated onto a single substrate. In one embodiment, the current level is set by adjusting the reference element directly. In a second embodiment, the current level is set by adjusting the circuit power supply, so that the current level can be set remotely without the need to adjust the reference element directly. The second embodiment is preferably suited for the regulation of beam current in analytical instrumentation. In a third embodiment, the fixed reference element is replaced with a time-varying voltage signal. The current from the cathode then becomes a linear function of the time-varying reference signal. The third embodiment is preferably suited for application as an amplifying element or as the electron source in an emissive display.

Closed-loop cold cathode current regulator

A layer of doped or undoped germanosilicate glass is formed on a substrate and the layer of germanosilicate glass is thermally treated in steam to remove germanium from the germanosilicate glass, and thereby raise the reflow temperature of the germanosilicate glass so treated. The layer of germanosilicate glass on the substrate may be a nonplanar layer of germanosilicate glass. When thermally treating the nonplanar layer of germanosilicate glass in steam, the layer of germanosilicate glass may be planarized simultaneously with the removal of germanium from the planarized germanosilicate glass. This process may be repeated to create a hierarchy of reflowed glass where each underlying layer reflows at a higher temperature than the next deposited glass layer. The steam thermal treatment step may be preceded by a thermal pretreatment of the layer of germanosilicate glass in at least one of a noble gas and nitrogen gas, to reflow the layer of germanosilicate glass. The thermal pretreating step may partially planarize the nonplanar layer of germanosilicate glass, and the thermal treating step may then fully planarize the partially planarized germanosilicate glass. Alternatively, the thermal pretreating step may fully planarize the layer of germanosilicate glass and the thermal treating step may then remove germanium from the fully planarized germanosilicate glass.

Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby

A novel process for the selective deposition of solid-phase materials is disclosed, which process requires only the modulation of a single auxiliary gas within a suitable reactor assembly. According to the disclosed method, selective area deposition can be obtained on any desired microelectronic substrate by the creation of a vapor-phase chemical equilibrium system capable of deposition and etching the material to be deposited. The vapor-phase system is designed around a single reversible reaction wherein the material to be deposited equilibrates between that solid phase and its vapor-phase constituent species. By modulating an auxiliary gas flow into the reactor assembly, alternating deposition and etching processes can be obtained to yield an overall process which results in net overall selective and uniform deposition.

Alternating cyclic pressure modulation process for selective area

A thermally activated method of depositing a metal on a localized microscopic portion of a substrate, that can be carried out at relatively low process temperatures, and that is particularly useful for depositing metals in an amount and purity sufficient for electrical conductivity on substrates containing microelectronic circuits and devices or their respective precursors. The method comprises heating a substrate in the presence of a vaporized metal-organic composition to a first temperature that is just below the temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion, and then raising the temperature of a localized portion of the heated substrate from the first temperature to a second, higher temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion but below the temperature at which the organic-containing portion will decompose to produce and deposit organic decomposition products upon the localized portion, and until an amount of the dissociated metal sufficient for electrical conductivity deposits upon the localized portion.

Growing community of inventors

Cary, NC, United States of America

Dorota Temple