Applied Materials Israel Limited

Nice Systems Ltd.

Qognify Ltd.

Zuli Holdings Ltd.

Applied Materials Isreal Ltd

Microtech Medical Technologies Ltd

Doron Girmonsky

Ishai Schwarzband

Yaron Shmueli

Mor Baram

Dror Shemesh

Roman Kris

Raanan Yehezkel

Shimon Levi

Yaniv Gurwicz

Vladimir Goldner

Sergey Khristo

Guy Boudoukh

Yan Avniel

Guy Blumstein-Koren

Sergey Pashkevich

Meir Bechor

Boaz Cohen

Igal Dvir

Shaul Cohen

Noam Zac

Ron Katzir

Michal Eilon

Shay Attal

Guy Lorman

Uri Hadar

Guy Maoz

Lee Moldovan

Kfir Ben-Zikri

Barak Israel

Ran Eisenberg

Nissim Avraham

Rafael Ben Ami

A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective depth; and (ii) measuring the emitted light to obtain an optical emission data set of the sample. The data analysis operation includes obtaining from the measured optical emission data sets a concentration map quantifying a dependence of a concentration of a material, which the sample comprises, on at least the depth.

Z-profiling of wafers based on X-ray measurements

There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Dinformative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of D, or of data correlated to D, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.

Determination of defect location for examination of a specimen

An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

Measuring height difference in patterns on semiconductor wafers

A method for evaluating an object, the method may include acquiring, by a charged particle beam system, an image of an area of a reference object, wherein the area includes multiple instances of a structure of interest, and the structure of interest is of a nanometric scale; determining multiple types of attributes from the image; reducing a number of the attributes to provide reduced attribute information; generating guidelines, based on the reduced attribute information and on reference data, for evaluating the reduced attribute information; and evaluating an actual object by implementing the guidelines.

Evaluating an object

A system and method for detecting an object of interest. A system and method may generate a first signature for an object of interest based on an image of the object of interest. A system and method may generate a second signature for a candidate object based on an image of the candidate object. A system and method may calculate a similarity score by relating the first signature to the second signature and may determine the image of the candidate object is an image of the object of interest based on the similarity score.

System and method for suspect search

The subject matter discloses a method, comprising obtaining a current retention time of storage associated with a digital recorder; obtaining current bitrates of channels used to transmit video captured by edge devices communicating with the digital recorder. The method then determines change in compression rates to be allocated to at least a portion of the channels according to the current retention time and the current bitrates and transmits the change in compression rates to be allocated to the channels to edge devices communicating with the digital recorder. The method can be implemented in a system in which several digital recorders use the same storage.

Method and system for utilizing storage in network video recorders

System and method for central managing of network and storage resources by dynamically receiving over a network bit rate parameters related to video processing units of one or more edge devices and dynamically adjusting a bit rate of one of the processing units based on required bit rates of the processing units and bandwidth limitations of the network. The system and method may further include dynamically receiving storage parameters related to internal storage units of the edge devices and to external storage units coupled to the edge devices and instructing one of the edge devices where to store the video data based on the storage parameters and bandwidth limitations of the network.

System and method for central management of network and storage resources for a video surveillance system

Methods and systems for determining the resonance frequency of a resonator, using the Doppler effect. An interrogating sonic beam including a carrier frequency and one or more resonator exciting frequencies is directed at a resonator disposed in a measurement environment. Resonator vibrations are excited by the resonator exciting frequencies. The carrier frequency is modulated by the vibrating part(s) of the resonator. The returning signal is received and analyzed to determine the amplitude of the Doppler shifted sideband frequencies. The resulting data is processed to determine the resonator's resonance frequency. Using calibrated resonating sensors having a resonance frequency that varies as a function of a physical parameter in a measurement environment, the method and systems allow determining the value of the physical variable from the sensor's resonance frequency. The methods and systems may be used, inter alia, to determine intraluminal blood pressure in various parts of a cardiovascular system, the pressure of intra-cranial fluids, the pressure of fluids in various bodily cavities by using implantable calibratable resonating pressure sensors. The methods and systems may also be used for determining the pressure in various industrial measurement environments and enclosures. Methods and systems are provided for detecting the sensor and for centering the interrogating beam on the sensor.

Methods and devices for determining the resonance frequency of passive mechanical resonators

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Raanana, Israel

Doron Girmonsky