Qimonda Ag

Infineon Technologies Austria Ag

Infineon Technologies Ag

Doris Keitel-Schulz

Josef Willer

Michael Specht

Christoph Friederich

Qi Zhu

Martin Krueger

Marc Fahlenkamp

Detlev Richter

Sergio Rossi

Dieter Zipprick

Matthias Schneider

Michael Scheppler

Helmut Schwalm

Xavier Veredas-Ramirez

Christian Wald

Franz Hofmann

Lars Bach

Thomas Melde

Renate Angelika Muehlbauer

Natasha Novik

Helmut Sochor

Renate Angelika Mühlbauer

A method for controlling an electric load is described herein. In accordance with one embodiment the method includes collecting ambient energy using an energy harvesting circuit and using the collected ambient energy to charge a buffer capacitor. The method further includes alternatingly connecting and disconnecting an electrical load and the buffer capacitor, wherein a capacitor voltage provided by the buffer capacitor is applied to the electrical load in a discharging phase, in which the electrical load is connected to the buffer capacitor and the capacitor voltage decreases, and wherein the buffer capacitor is recharged in a charging phase, in which the electrical load is disconnected from the buffer capacitor in a charging phase in which the capacitor voltage again increases. The durations of the charging phase and the discharging phase are designed such that the capacitor voltage stays above a minimum supply voltage of the electrical load.

Control of passive electric systems powered by energy harvesting

According to one embodiment a circuit comprises a supply pin operable to receive a supply voltage, a non-volatile memory for storing one or more parameters, and a Near Field Communication (NFC) transceiver that is operable to receive data representing the one or more parameters. The circuit is operable to deactivate the NFC transceiver in response to receiving the supply voltage at the supply pin.

Power regulation for lighting using NFC

A semiconductor device for outputting a control parameter includes a receiving unit, a storage unit and an output unit. The semiconductor device also contains antenna connections, supply connections and at least one output connection for outputting a control parameter signal. The receiving unit contains connections for connection to an antenna, from which the receiving unit receives signals. The receiving unit converts the signals received from the antenna into data. The data are stored in the storage unit. The semiconductor device outputs an output signal at the output connection on the basis of the data stored in the storage unit. The semiconductor device additionally contains a calculation unit which determines the operating hours (time) of the semiconductor device. The output signal depends both on the data stored in the storage unit and on the determined operating hours (time).

Semiconductor device for outputting a control parameter

A switched mode power supply circuit includes a switching converter receiving an input voltage and generating an output voltage from the input voltage in accordance with a switching signal. A switching controller unit is configured to generate the switching signal in accordance with a control parameter set such that the output voltage matches a set-point.

Switched mode power supply circuit

A memory system having a plurality of memory cells for storing payload data and redundancy data. The memory system having a read-out circuit configured to read-out a status of the plurality of memory cells, the read-out status having payload data, redundancy data and associated reliability information. Moreover, the memory system has a data processor configured to derive the payload data from the read-out status using the reliability information.

Memory read-out

An integrated circuit is described. The integrated circuit may comprise a multitude of floating-gate electrodes, wherein at least one of the floating-gate electrodes has a lower width and an upper width, the lower width being larger than the upper width, and wherein the at least one of the floating-gate electrodes comprises a transition metal. A corresponding manufacturing method for an integrated circuit is also described.

Integrated circuit with floating-gate electrodes including a transition metal and corresponding manufacturing method

An integrated circuit is described. The integrated circuit may have: an active area line formed of a material of a semiconductor substrate with a first longitudinal direction parallel to an upper surface of the semiconductor substrate; wherein the active area line has at least one form-supporting element extending in a second longitudinal direction parallel to the upper surface of the semiconductor substrate; and wherein the second longitudinal direction is arranged with regard to the first longitudinal direction in an angle unequal to 0 degree and unequal to 180 degree.

Integrated circuit with an active area line having at least one form-supporting element and corresponding method of making an integrated circuit

A method for forming trenches on a surface of a semiconductor substrate is described. The method may include: etching a first plurality of trenches into the surface of the semiconductor substrate; filling the first plurality of trenches with at least one material; and etching a second plurality of trenches into every second trench of the first plurality of trenches. Furthermore, a method for forming floating-gate electrodes on a semiconductor substrate and an integrated circuit is described.

Method for forming trenches on a surface of a semiconductor substrate

Growing community of inventors

Hoehenkirchen, Germany

Doris Keitel-Schulz