Applied Materials, Inc.

National University of Singapore

Doreen Wei Ying Yong

Andrea Leoncini

Paul Mehlmann

Nemanja Dordevic

Han Vinh Huynh

Bhaskar Jyoti Bhuyan

John Leonard Sudijono

Mark Joseph Saly

Yong Xin Wang

Feng Quan Liu

Chandan Kr Barik

Chandan Das

Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films

Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum (0) precursors for deposition of molybdenum films

Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Cycloheptatriene molybdenum (0) precursors for deposition of molybdenum films

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(0) precursors for deposition of molybdenum films

Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Arene molybdenum (0) precursors for deposition of molybdenum films

Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

Semiconductor device patterning methods

Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.

Selective deposition of a passivation film on a metal surface

Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.

Area-selective atomic layer deposition of passivation layers

Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.

Selective deposition of a passivation film

Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

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Singapore, Singapore

Doreen Wei Ying Yong