Qualcomm Incorporated

Dorav Kumar

Ramaprasath Vilangudipitchai

Venkatasubramanian Narayanan

Venugopal Boynapalli

Seid Hadi Rasouli

Lipeng Cao

Bilal Zafar

Xiangdong Chen

Ohsang Kwon

Giby Samson

Satyanarayana Sahu

Venkat Narayanan

Javid Jaffari

Raghavendra Srinivas

Paras Gupta

Parissa Najdesamii

Steven James Dillen

Radhika Vinayak Guttal

Divjyot Bhan

Mamta Bansal

Andi Zhao

Bala Krishna Thalla

Sivakumar Paturi

Xi Luo

Uday Doddannagari

Nitin Partani

Uday Shankar Mudigonda

In certain aspects, an apparatus includes a first plurality of power switch devices. Each of the first plurality of power switch devices includes a delay line having a programmable time delay, and a power switch coupled between a supply rail and a circuit block, wherein the power switch has a control input coupled to the delay line. The apparatus also includes a switch manager configured to program the time delays of the delay lines in the first plurality of power switch devices based on a number of active circuit blocks in a system.

Power chain with delay adaptive switches

A power multiplexor includes: a first branch including a first transistor coupled in series with a second transistor between a first power supply and a power output; a second branch including a third transistor coupled in series with a fourth transistor between a second power supply and the power output; a controller configured to selectively assert and de-assert a control signal to the first branch and the second branch; a first voltage level shifter coupled between the second transistor and the controller; and a second voltage level shifter coupled between the third transistor and the controller.

Digital power multiplexor

A MOS IC includes pMOS transistors, each having a pMOS transistor drain, source, and gate. Each pMOS transistor gate extends in a first direction and is coupled to other pMOS transistor gates. Each pMOS transistor source/drain are coupled to a first voltage source. The MOS IC further includes a first metal interconnect extending over the pMOS transistors. The first metal interconnect has first and second ends. The first metal interconnect is coupled to each pMOS transistor gate and is coupled to a second voltage source less than the first voltage source. One of each pMOS transistor gate or the second voltage source is coupled to the first metal interconnect through at least one tap point located between the first and second ends. The pMOS transistors and the first metal interconnect function as a decoupling capacitor.

Decoupling capacitor with metal programmable knee frequency

The apparatus provided includes a memory. The memory is configured to receive a memory clock. The apparatus also includes a single stage logic gate configured to generate the memory clock from a reference clock. The memory clock is a gated clock. Additionally, the memory clock has a wider pulse width than the reference clock. In an example, the single stage logic gate comprises a pull-up circuit configured to pull-up the memory clock, and a pull-down circuit coupled to pull-down the memory clock. In an example, the pull-up and the pull-down circuits are configured to be controlled by the reference clock, a delayed reference clock, and a gating signal. An example further includes a delay circuit configured to generate the delayed reference clock from the reference clock. An example further includes a latch configured to generate the gating signal.

Pulse-stretcher clock generator circuit for high speed memory subsystems

A MOS device may include a first logic component with a first input located on a second track and a first output located on the third track. The MOS device may include a second logic component with a second input located on the fourth track and a second output located on a fifth track. For example, the MOS device includes a first interconnect on a Mlayer that is coupled to the first input on the second track. In another example, the MOS device includes a second interconnect on the Mlayer that is coupled to the first output on the third track. The MOS device includes a third interconnect on a Mlayer that is coupled to the second input on the fourth track. Still further, the MOS device includes a fourth interconnect on the Mlayer that is coupled to the second output on the fifth track.

Standard cell architecture for reduced parasitic resistance and improved datapath speed

An integrated circuit (IC) is disclosed herein for adjustable power rail multiplexing. In an example aspect, an IC includes a first power rail, a second power rail, and a load power rail. The IC further includes multiple power-multiplexer (power-mux) tiles and adjustment circuitry. The multiple power-mux tiles are coupled in series in a chained arrangement and implemented to jointly perform a power-multiplexing operation. Each power-mux tile is implemented to switch between coupling the load power rail to the first power rail and coupling the load power rail to the second power rail. The adjustment circuitry is implemented to adjust at least one order in which the multiple power-mux tiles perform at least a portion of the power-multiplexing operation.

Adjustable power rail multiplexing

Systems and methods for powering up circuits are described herein. In one embodiment, a method for power up comprises comparing a voltage of a first supply rail with a voltage of a second supply rail, and determining whether the voltage of the first supply rail is within a predetermined amount of the voltage of the second supply rail for at least a predetermined period of time based on the comparison. The method also comprises initiating switching of a plurality of switches coupled between the first and second supply rails upon a determination that the voltage of the first supply rail is within the predetermined amount of the voltage of the second supply rail for at least the predetermined period of time.

Voltage comparator

An integrated circuit (IC) is disclosed herein for power management through power rail multiplexing. In an example aspect, an IC includes a first power rail, a second power rail, and a load power rail. The IC also includes a first set of transistors including first transistors that are coupled to the first power rail and a second set of transistors including second transistors that are coupled to the second power rail. The IC further includes power-multiplexer circuitry that is configured to switch access to power for the load power rail from the first power rail to the second power rail by sequentially turning off the first transistors of the first set of transistors and then sequentially turning on the second transistors of the second set of transistors.

Integrated circuit power rail multiplexing

A standard cell IC may include a plurality of pMOS transistors each including a pMOS transistor drain, a pMOS transistor source, and a pMOS transistor gate. Each pMOS transistor drain and pMOS transistor source of the plurality of pMOS transistors may be coupled to a first voltage source. The standard cell IC may also include a plurality of nMOS transistors each including an nMOS transistor drain, an nMOS transistor source, and an nMOS transistor gate. Each nMOS transistor drain and nMOS transistor source of the plurality of nMOS transistors are coupled to a second voltage source lower than the first voltage source.

Standard cell architecture for reduced leakage current and improved decoupling capacitance

A MOS device includes a number of standard cells configured to reduce routing congestions while providing area savings on the MOS device. The standard cells may be single height standard cells that share an n-type well isolated from other nearby n-type wells. The input and output signal pins of the single height standard cells may be configured in a lowest possible metal layer (e.g., M1), while the secondary power pins of the single height standard cells may be configured in a higher metal layer (e.g., M2). Interconnects supplying power to secondary power pins may be configured along vertical tracks and shared among different sets of standard cells, which may reduce the number of vertical tracks used in the MOS device. The number of available horizontal routing tracks in the MOS device may remain unaffected, since the horizontal tracks already used by the primary power/ground mesh are used for power connection.

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San Diego, CA, United States of America

Dorav Kumar