Samsung Electronics Co., Ltd.

Doosik Seol

Kyungho Lee

Taesub Jung

Masato Fujita

Kyungduck Lee

Hyuncheol Kim

Kazunori Kakehi

Seungki Baek

An image sensor includes: (1) a substrate having first and second surfaces opposing each other in a first direction and a plurality of unit pixels, (2) first and second photodiodes disposed in the substrate in each of the plurality of unit pixels and isolated from each other in a second direction perpendicular to the first direction, (3) a first device isolation film disposed between the plurality of unit pixels, and (4) a pixel internal isolation film disposed in at least one of the plurality of unit pixels. A second device isolation film overlaps at least one of the first and second photodiodes in the first direction. A pair of third device isolation films: (a) extend from the first device isolation film into the unit pixel in a third direction perpendicular to the first direction and the second direction and (b) oppose each other.

Image sensor

Provided is an image sensor including a semiconductor substrate having first and second surfaces disposed opposite to the first surface, a pixel separation structure disposed in the semiconductor substrate and defining and surrounding a pixel region, first and second photoelectric conversion regions disposed in the semiconductor substrate on the pixel region, a first transfer gate electrode disposed on the first surface of the semiconductor substrate and between the first photoelectric conversion region and a first floating diffusion region, a second transfer gate electrode disposed on the first surface of the semiconductor substrate and between the second photoelectric conversion region and a second floating diffusion region, a pixel gate electrode disposed on the first surface of the semiconductor substrate and overlapping one of the first and second photoelectric conversion regions, and impurity regions disposed on opposite sides of the pixel gate electrode.

Image sensor with pixel separation structure

An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between a plurality of pixels. Each of the plurality of pixels include a pixel circuit below at least one photodiode. The logic circuit acquires a pixel signal from the plurality of pixels. The pixel array includes at least one autofocusing pixel, which includes a first photodiode, a second photodiode, a pixel internal isolation layer between the first and second photodiodes, and a microlens on the first and second photodiodes. The pixel internal isolation layer includes a first pixel internal isolation layer and a second pixel internal isolation layer, separated from each other in a first direction, perpendicular to the upper surface of the substrate, and the first pixel internal isolation layer and the second pixel internal isolation layer include different materials.

An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

An image sensor includes a substrate having first and second surfaces, pixel regions arranged in a direction parallel to the first surface, first and second photodiodes isolated from each other in each of the pixel regions, a first device isolation film between the pixel regions, a pair of second device isolation films between the first and second photodiodes and extending from the first device isolation film, a doped layer adjacent to the pair of second device isolation films and extending from the second surface to a predetermined depth and spaced apart from the first surface, the doped layer being isolated from the first device isolation film, and a barrier area between the pair of second device isolation films and having a potential greater than a potential of a portion of the substrate adjacent to the barrier area.

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Seoul, South Korea

Doosik Seol