Samsung Display Co., Ltd.

Doona Kim

Keunwoo Kim

Jaehwan Chu

Dokyeong Lee

Sangsub Kim

Taewook Kang

Yongsu Lee

Bummo Sung

Meejae Kang

Hanbit Kim

A method of manufacturing a display apparatus includes forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer; forming a driving semiconductor layer and a compensation semiconductor layer using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer; exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern; forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern; exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.

Display apparatus and method of manufacturing the same

An organic light-emitting display apparatus includes an organic light-emitting diode, a driving transistor configured to control an amount of electric current flowing to the organic light-emitting diode from a power line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to first and second compensation gate electrodes of the compensation transistor, and a gate insulating layer between the compensation gate electrodes and a compensation active region of a compensation transistor. A layer structure of the gate insulating layer between the first compensation gate electrode and the compensation active region is different from a layer structure of the gate insulating layer between the second compensation gate electrode and the compensation active region.

Organic light-emitting display apparatus and method of manufacturing the same

A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.

Thin-film transistor substrate having a thin-film layer including amorphous silicon disposed between a first electrode and a second electrode of a storage capacitor and display apparatus comprising the same

A display apparatus includes a first thin-film transistor including a semiconductor layer arranged on a substrate, a driving gate electrode arranged on the semiconductor layer, and a first electrode arranged between the substrate and the semiconductor layer, a second thin-film transistor transmitting a data signal received through a data line to the first thin-film transistor according to a first scan signal received through a first scan line, and a third thin-film transistor transmitting a first voltage to the first electrode according to a second scan signal received through a second scan line.

Growing community of inventors

Yongin-si, South Korea

Doona Kim