Samsung Electronics Co., Ltd.

Doo-Won Kwon

Chang-Sup Mun

Woo-Gwan Shim

Hyung-Ho Ko

Jeong-Nam Han

Im-Soo Park

Yu-Kyung Kim

Sang-jun Choi

Chang-ki Hong

Han-Ku Cho

Chang-Ki Hong

This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture

Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.

Cleaning solution of silicon germanium layer and cleaning method using the same

A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NHOH), hydrogen peroxide (HO), and deionized water (HO), and the second cleaning solution comprises at least 200 times more deionized water (HO) than ammonium hydroxide (NHOH) by volume.

Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device

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Seoul, South Korea

Doo-Won Kwon