Samsung Electronics Co., Ltd.

Doo-Whan Choi

Chang-Won Choi

Jung-Bong Yun

A method of forming a transistor is provided. An upper portion of a substrate is partially removed forming a trench. An isolation layer partially fills the trench, forming active patterns of the substrate. The isolation layer has a void therein. A photoresist pattern is formed on the active patterns and the isolation layer. The active patterns and the isolation layer are partially removed using the photoresist pattern as an etching mask, thus forming a recess. A plasma treatment process is performed, removing the photoresist pattern and filling the void. A gate insulation layer and a gate electrode fill the recess.

Methods of forming transistors and methods of manufacturing semiconductor devices including the transistors

A method of removing photoresist from a wafer or other substrate consists of ashing the photoresist only once the wafer is spaced a predetermined distance above a wafer stage in a process chamber, so that the photoresist is removed at once from all of the surfaces of the wafer. The wafer is heated to a temperature of 210&deg; C. to 230&deg; C. after it is positioned on the upper surface of the wafer stage. The heated wafer is then raised a distance of 9 mm to 11 mm above the upper surface of the wafer stage. At this time, process gas is introduced into the process chamber, and the process gas is converted into plasma. Thus, the plasma efficiently removes the photoresist all at once from the surfaces of the wafer.

Growing community of inventors

Hwaseong-si, South Korea

Doo-Whan Choi