Korea Institute of Science and Technology

Samsung Electronics Co., Ltd.

Doo Seok Jeong

Kyeong Seok Lee

Won Mok Kim

Wook Seong Lee

Taek Sung Lee

In Ho Kim

InHo Kim

Byung Ki Cheong

Ji-Won Choi

Young Joon Baik

Seong Keun Kim

Jong-Keuk Park

Sangtae Kim

Gyu Weon Hwang

Jeung Hyun Jeong

Jong Keuk Park

Doh Kwon Lee

Chong-Yun Kang

Jin-Sang Kim

Seung-Hyub Baek

Su Youn Lee

Hyeon Seung Lee

Jung Joon Pyeon

Cheol Jin Cho

Young-Jin Ko

An embodiment includes a method of texturing a semiconductor substrate, a semiconductor substrate manufactured using the method, and a solar cell including the semiconductor substrate, the method including: forming metal nanoparticles on a semiconductor substrate, primarily etching the semiconductor substrate, removing the metal nanoparticles, and secondarily etching the primarily etched semiconductor substrate to form nanostructures.

Method of texturing semiconductor substrate, semiconductor substrate manufactured using the method, and solar cell including the semiconductor substrate

Present invention provides a spectrometer including a first unit spectral filter configured to absorb or reflect light in a part of a wavelength band of a light spectrum of an incident target, a second unit spectral filter configured to absorb or reflect light in a wavelength band different from the part of the wavelength band, a first light detector configured to detect a first light spectrum passing through the first unit spectral filter, a second light detector configured to detect a second light spectrum passing through the second unit spectral filter, and a processing unit configured to perform a function of restoring a light spectrum of the target incident from spectra of light detected from the first light detector and the second light detector.

Spectrometer and spectrum measurement method utilizing same

A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.

Method for manufacturing electrode for hydrogen production using tungsten carbide nanoflake and electrode for hydrogen production manufactured thereby

A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Jr).

Capacitor for semiconductor memory element and method for manufacturing the same

A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.

Method for fabricating nanoantenna array, nanoantenna array chip and structure for lithography

A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.

Plasmonic nano-color coating layer and method for fabricating the same

A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.

Filterless color image sensor

A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same

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Seoul, South Korea

Doo Seok Jeong