Samsung Display Co., Ltd.

Doo-Hyoung Lee

Tae-Young Choi

Bo Sung Kim

June Whan Choi

Yeon Taek Jeong

Yeon-Taek Jeong

Kano Masataka

Young-Min Kim

Bo-Sung Kim

Hyun-Jae Kim

Ki-beom Lee

Kang-Moon Jo

Doo-Na Kim

Seon-Pil Jang

Hyun-Soo Lim

Eun-Hye Park

You-Seung Rim

Dong-Lim Kim

A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

Thin film transistor and manufacturing method thereof

According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same

Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1.MAn &#x2003;&#x2003;(Formula 1)Herein, M is a metal ion, A is an organic ligand which includes &#x3b1;-substituted carboxylate, and n is a natural number.

Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same

Growing community of inventors

Suwon-si, South Korea

Doo-Hyoung Lee