Samsung Display Co., Ltd.

Doo Hyoung Lee

Bo Sung Kim

Seung-Ho Jung

Chan Woo Yang

June Whan Choi

Tae-Young Choi

Doo Na Kim

Yeon Taek Jeong

Eun Hye Park

Chang Ho Lee

Chang Yong Jeong

Sung Chan Jo

Sang Won Shin

Sang Woo Sohn

Na Ri Ahn

Jee Hoon Kim

Soo Im Jeong

Kyung Lae Rho

Sang Hyung Lim

Hui Won Yang

Jin Ho Jang

Myeong Kyu Park

Sung Wook Woo

Mi Hyang Sheen

A display device includes a first conductive pattern on a substrate, a first insulating layer on the first conductive pattern, a semiconductor pattern on the first insulating layer, a second insulating layer on the first insulating layer and the semiconductor pattern, and a second conductive pattern on the second insulating layer. A first edge of the first conductive pattern faces a second edge of the second conductive pattern, the first conductive pattern does not overlap the second conductive pattern in an area where the first edge faces the second edge, the semiconductor pattern is in the area where the first edge faces the second edge, the second conductive pattern overlaps the second insulating layer, and the second insulating layer includes a third edge protruding from the second edge of the second conductive pattern.

Display device

A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

Transistor and display device having the same

A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.

Thin film transistor and method of forming the same

A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor

A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Growing community of inventors

Suwon-si, South Korea

Doo Hyoung Lee