Korea University Research and Business Foundation

Doo Hyeok Lim

Sang Sig Kim

Kyoung Ah Cho

Sol A Woo

Jin Sun Cho

Young Soo Park

Yoon Joong Kim

Hyun Gu Kang

The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.

Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor

The present disclosure relates to a novel neuron circuit using a p-n-p-n diode to realize small size and low power consumption. The neuron circuit according to one embodiment of the present disclosure may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a critical value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor.

Neuron circuit using p-n-p-n diode without external bias voltages

The present disclosure relates to a reconfigurable logic-in-memory device using a silicon transistor, according to the embodiment of the present disclosure, the reconfigurable logic-in-memory device using a silicon transistor comprises the silicon transistor including a drain region, a first channel region, a second channel region, a source region, and a gate region, wherein the silicon transistor performs a first channel operation while forming a first positive feedback loop in which an electron is a majority carrier in the first channel region and the second channel region depending on a level of a gate voltage Vapplied through the gate region or performs a second channel operation while forming a second positive feedback loop in which a hole is a majority carrier in the first channel region and the second channel region depending on the level of a gate voltage Vapplied through the gate region.

Reconfigurable logic-in-memory device using silicon transistor

Provided is a spike pulse generation circuit comprising a single silicon device configured to non-periodically or periodically generate a spike pulse. More particularly, the spike pulse generation circuit comprising the single silicon device can utilize a positive feedback loop and a negative feedback loop to be mutually connected so as to selectively output a spike pulse related to a neural oscillation function similar to biological oscillation, thereby being capable of serving as a ring oscillator and performing a neuron function operation.

Spike pulse generation circuit comprising single silicon device

The present disclosure discloses a feedback field-effect electronic device using a feedback loop operation and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the array circuit includes a plurality of feedback field-effect electronic devices in which the source region of a diode structure and the drain region of an access electronic device are connected in series, wherein the diode structure is connected to a bit line and a first word line, the access electronic device is connected to a source line and a second word line, and a random access operation is performed by selectively applying voltage to the bit line and the first and second word lines.

Feedback field-effect electronic device using feedback loop operation and array circuit using feedback field-effect electronic device

The present disclosure discloses a feedback field-effect array device capable of converting between volatile and non-volatile operations and an array circuit using the same. According to one embodiment of the present disclosure, the array circuit may include a plurality of feedback field-effect array devices, wherein the source region of the feedback field-effect electronic device and the drain region of an access electronic device may be connected to each other in series, the feedback field-effect electronic device may be connected to a bit line and a first word line, the access electronic device may be connected to a source line and a second word line, and any one of first and second gate voltages may be applied to the first word line to store data in a first logic state or data in a second logic state.

Feedback field-effect array device capable of converting between volatile and non-volatile operations and array circuit using the same

The present disclosure discloses a transposable feedback field-effect electronic device and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the feedback field-effect electronic device may include a diode structure, a plurality of gate electrodes, and a plurality of access electronic devices, wherein, when the diode structure receives voltage through a first gate electrode of the gate electrodes and a first access electronic device of the access electronic devices, first direction access may be performed, and when the diode structure receives voltage through a second gate electrode of the gate electrodes and a second access electronic device of the access electronic devices, second direction access may be performed.

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Seoul, South Korea

Doo Hyeok Lim