Samsung Electronics Co., Ltd.

Doo Hee Hwang

Tae Hun Kim

Jee Hoon Han

Kwang Young Jung

Joo-Heon Kang

Gi Yong Chung

Jae Ryong Sim

Chul-Hwan Choo

Jun Ha Hwang

A memory device includes a memory cell for storing data, and a memory controller configured to check whether a dynamic voltage frequency scaling core (DVFSC) operation is used, check information stored in the memory device indicating a setting of the host device in response to the DVFSC operation being used, determine a level of a low voltage used for the DVFSC operation based on the information, and transmit the determined level of the low voltage used for the DVFSC operation to the host device.

Memory device and method for managing dynamic voltage frequency scaling operations based on host configuration

A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Method of fabricating semiconductor device

Semiconductor memory device and method for fabricating the same

Growing community of inventors

Uiwang-si, South Korea

Doo Hee Hwang