Electronics and Telecommunications Research Institute

Doo Hee Cho

Hye Yong Chu

Jeong Ik Lee

Jin Wook Shin

Jong Hee Lee

Joo Won Lee

Jun Han Han

Kyoung Ik Cho

Chi Sun Hwang

Kyong Hon Kim

Chun Won Byun

Shin Hyuk Yang

Byoung Gon Yu

Seung Youl Kang

Joon Tae Ahn

Bong Je Park

Sung Min Yoon

Hong Seok Seo

Ki Chul Kim

Soon Won Jung

Yong Gyu Choi

Hye Jin Kim

Myung Lae Lee

Jong Moo Lee

Min Yong Jeon

Woo Seok Cheong

Jeong Dae Suh

Ki Bong Song

Sang Hyeob Kim

Jae Kwang Lee

Yong Goo Yoo

Jong Gu Heo

Tae Hoon Lee

A method of manufacturing an organic-light-emitting-diode (OLED) flat-panel light-source apparatus. The method includes depositing a metal layer on a substrate and patterning the metal layer to form a plurality of subsidiary electrodes, forming an insulating layer on the substrate including the plurality of subsidiary electrodes and forming a first subsidiary electrode layer by etching the insulating layer until some of the plurality of subsidiary electrodes are exposed, and sequentially forming an anode, an organic emission layer (EML), and a cathode on the substrate on which the first subsidiary electrode layer is formed.

Method of manufacturing organic-light-emitting-diode flat-panel light-source apparatus

Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Transparent nonvolatile memory thin film transistor and method of manufacturing the same

Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.

Organic-light-emitting-diode flat-panel light-source apparatus

A method of fabricating an organic light emitting diode using phase separation. The method includes preparing a transparent substrate. A first light path control layer is formed on the transparent substrate. The first light path control layer includes a mixture of a first medium and a second medium having a lower refractive index than the first medium using the phase separation. An anode, an organic emission layer, and a cathode are sequentially stacked on the first light path control layer. In this method, an OLED with improved light extraction efficiency can be fabricated using a simple and inexpensive process.

Method of fabricating an organic light emitting diode using phase separation

Provided is an organic light emitting diode (OLED) panel for lighting, including an organic layer emitting light by reaction in response to power supplied by a positive electrode and a negative electrode, a protection cap protecting the organic layer from external moisture and oxygen, a cover film attached to upper surfaces of the positive electrode and negative electrode, and serving as a ground for the positive electrode and the negative electrode, and a conductive metal layer grounding the positive electrode and the negative electrode to the cover film.

Combination organic light emitting diode panel and grounding unit

Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnO); and remaining molar percentage of an aluminum oxide (AlO). The thin film formed of the composition remains in amorphous phase at a temperature of 400&#xb0; C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

Composition for oxide semiconductor thin film and field effect transistor using the composition

A photo thin film transistor having a photoconductive layer including a chalcogenide element and a unit cell of an image sensor using the same are provided. The photo thin film transistor includes a glass substrate; a photoconductive layer that is formed of GST including a chalcogenide element, is disposed on the glass substrate, and absorbs light and generates an optical current; a source electrode and a drain electrode that are formed on respective sides of the photoconductive layer and form a path for the optical current generated by the photoconductive layer; a gate insulating layer formed on the photoconductive layer; and a gate electrode that is formed on the gate insulating layer and turns the optical current on or off. The photo thin film transistor includes amorphous GST including a chalcogenide element forming a photoconductive layer, thereby providing very high photoconductivity.

Photo thin film transistor having photoconductive layer including chalcogenide element and unit cell of image sensor using the same

Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to insulate an upper electrode from a lower electrode in manufacturing a magnetic reproduction device, thereby simplifying and optimizing a manufacturing process and significantly reducing a manufacturing time.

Method of manufacturing thin film magnetic head

Provided is a microelectromechanical system (MEMS) actuator in which a cantilever piezoelectric actuator and a comb actuator are combined to perform dual shaft drive. The MEMS includes: a stationary comb fixed on a substrate; a movable comb disposed separately from the substrate; and a spring connected to the movable comb and the substrate to resiliently support the movable comb, wherein the movable comb includes a piezoelectric material layer in a laminated manner to be perpendicularly moved by a piezoelectric phenomenon and laterally moved by an electrostatic force to the stationary comb, whereby the MEMS actuator can be used in a driving apparatus of an ultra-slim optical disk drive since the movable comb is made of a piezoelectric material to simultaneously perform focusing actuation to a Z-axis as well as planar actuation.

Piezoelectric and electrostatic microelectromechanical system actuator

The present invention is a thulium doped silicate glass having an excellent fluorescent emission in the 1.4 &#x3bc;m band, and the usage thereof. The silicate glass of this invention includes: 65&#x2dc;95 mol % SiO; 0.5&#x2dc;30 mol % bivalent metal oxide consisting of one or more material selected from ZnO, BaO, SrO and PbO; and 1&#x2dc;15 mol % of SnOor TiO, wherein 3&#x2dc;30 mol % oxygen of the glass composition are replaced with fluorine, and 0.01&#x2dc;1 mol % of thulium ions are doped, and the fluorescence lifetime of theHlevel of the Tmis more than 50 &#x3bc;s. The silicate glass can be easily formed into a waveguide, such as optical fiber, and it has an excellent ability to splice with the optical fiber for transmission. They have excellent chemical durability and the characteristic of 1.4 &#x3bc;m band fluorescent emission by suppressing the non-radiative transition through multi-phonon relaxation. Thus they have long fluorescence lifetime of theHof Tm.

Tm3+-doped silicate glass and the use thereof

The present invention relates to a main wavelength band of a pump light source capable of improving the pump efficiency while using 1.6 &#x3bc;m fluorescence emitted from Ho:I&#x2192;Itransition as an optical amplifier, and an assistant pump wavelength band capable of accomplishing population inversion betweenIlevel andIlevel to improve the signal gain characteristics of such amplifier. The optical amplifier using optical materials to which holmium or holmium and terbium, holmium and europium, holmium and neodymium or holmium and dysprosium, etc. are doped can be pumped using a light source that emits light of 11,200&#x2dc;11,500 cmor a light source that emits light of 6,000&#x2dc;6,500 cm.

Optical amplifier

The present invention relates to a multi-layer optical planar waveguide which is vertically coupled using multimode-interference couplers and to the method of manufacturing the same. The purpose of this invention is to increase the degree of integration on the multi-layer optical planar waveguide by applying the concept of via holes of the multi-layer printed circuit board (MLPCB) used in electronic circuits to the optical waveguide devices. According to the present invention, particularly, a multimode interference coupler of a stepped structure has the higher coupling ratio at relatively short length of interference than the usual multimode interference coupler. The present invention can implement a multimode interference coupler at a specialized spot while reducing evanescent field interference between the upper and lower optical waveguides out of the spot by separating the layers enough.

Multimode interference coupler, multi-layer optical planar waveguide using the same and method of manufacturing the same

The present invention relates to a method of manufacturing a waveguide using an ion exchange process. The present invention controls the refractive index and the thickness of a surface layer on a glass substrate using an ion exchange process, forms the waveguide pattern on the surface layer by means of photolithography and etching process and coats with materials having the refractive index same to or lower than that of the glass substrate to form a cladding layer. Accordingly, the present invention can manufacture a planar waveguide, which is excellent in dimension control and reproducibility and has a sharp step wall.

Growing community of inventors

Daejeon, South Korea

Doo Hee Cho