Samsung Electronics Co., Ltd.

Doo-Guen Song

Chung-sam Jun

Seung-Ki Chae

Sun-Yong Choi

Dong-Chun Lee

Hyung-Sik Hong

Gyeong-Su Keum

Tae-kyoung Kim

Jae-Hyun Han

Hyun-Kyu Kang

Tae-Sub Im

Sang-Yeob Cha

Gil-Jung Yun

Seung-Won Chae

In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Ion implanting apparatus and ion implanting method using the same

A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.

Method for monitoring an ion implanter and ion implanter having a shadow jig for performing the same

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Suwon-si, South Korea

Doo-Guen Song