Varian Semiconductor Equipment Associates, Inc.

Donna Smatlak

Joseph C Olson

Anthony Renau

Jun Lu

Peter F Kurunczi

Paul J Murphy

Russell J Low

Eric D Hermanson

Alexander S Perel

Shengwu Chang

Atul Gupta

James S Buff

Antonella Cucchetti

Rajesh Dorai

Gordon Angel

Damian Brennan

Dennis P Rodier

William Bintz

Paul Allan Daniel

Nobihiro Tokoro

Kurt Deckerlucke

Keith Pierce

Raymond L Pelletier

Leo Vincent Klos, Jr

Isao Tsunoda

A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

Technique for improving ion implantation throughput and dose uniformity

Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.

Techniques for confining electrons in an ion implanter

The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.

Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation

Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms

One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.

Electron injection in ion implanter magnets

A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.

Uniformity control multiple tilt axes, rotating wafer and variable scan velocity

A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.

Uniformity control using multiple fixed wafer orientations and variable scan velocity

A method and apparatus for determining a direction or parallelism of a beam. The beam can be any type of beam, including uncharged or charged particle beams or electromagnetic radiation beams. The beam can have any desired size or shape and can be scanned or fixed in place. A direction or parallelism of the beam can be determined by adjusting an intensity profile of at least a portion of the beam at a first position. The adjusted intensity profile can be formed, for example, by blocking a portion of the beam at the first position. The adjusted intensity profile can be formed by a special purpose device, such as a mask, adjustable aperture, etc., or by another device having a separate purpose. For example, a beam modifier used to form the adjusted intensity profile can be a detector used to determine a measure of uniformity of the beam. One or more detected intensity profiles downstream of the first position can be identified and the relative positions of where the adjusted intensity profile is formed and where the intensity profile(s) are detected relative to a reference direction can be used to determine a direction or parallelism of the beam.

Method and apparatus for determining beam parallelism and direction

An ion beam is sensed with a beam current sensor which has a sensing aperture that is smaller than a cross-sectional dimension of the ion beam at the beam current sensor. The sensed ion beam current is indicative of ion beam position relative to a desired ion beam path. The ion beam position may be adjusted if the sensed ion beam position differs from the desired ion beam path. One or more beam current sensors may be utilized in an ion implanter for calibration and/or alignment. The beam current sensor may be utilized to determine a relation between a characteristic of an ion beam, such as magnetic rigidity, and a parameter of a system element, such as magnetic field, required to direct the ion beam along a desired ion beam path.

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Belmont, MA, United States of America

Donna Smatlak