International Business Machines Corporation

Globalfoundries Inc.

Electricite De France

Donna S Zupanski-Nielsen

James L Hedrick

James Jeffrey Wynne

Jerome Marvin Felsenstein

Henry Atkinson Nye, Iii

Stephen James Kilpatrick

Keith E Fogel

Paul Alfred Lauro

Da-Yuan Shih

Sung Kwon Kang

Balaram Ghosal

S Jay Chey

William Francis Landers

Dustin M Fregeau

Mohammed S Shaikh

Aparna Prabhakar

Pavan Samudrala

Chih-Chao Yang

Lawrence Alfred Clevenger

Carl John Radens

Louis L Hsu

Mukta G Farooq

Timothy Harrison Daubenspeck

John Michael Cotte

David E Eichstadt

Lisa A Fanti

Raman Vaidyanathan

Maurice Mason

Pierre-Philippe Grand

Kathleen B Reuter

Emanual I Cooper

Hariklia Deligianni

Jesus Salvador Jaime Ferrer

Lubomyr Romankiw

Qiang Huang

Emmanuel Roche

A method for laser assisted delivery of therapeutic agents includes selectively controlling a valve connected to a first channel disposed within a first sidewall of a nozzle, applying, through the first channel, a first substance to penetrate dermis to a predetermined depth, and administering, through a second channel unconnected with the valve and disposed within a second sidewall of the nozzle, a second substance to remove debris.

Laser-assisted transdermal delivery of nanoparticulates and hydrogels

A laser treatment system includes a laser device configured to produce a laser beam at a wavelength in an ultraviolet spectrum to provide for tissue ablation, a lens configured to focus and direct the laser beam to a site to form an opening in a surface of the site, a valve connected to a first channel, and a nozzle that emits the laser beam and controls delivery of at least a first substance and a second substance to the site. A portion of the first channel is disposed within a first sidewall of the nozzle to deliver the first substance, and a second channel unconnected with the valve is disposed within a second sidewall of the nozzle to deliver the second substance.

Systems for laser assisted delivery of therapeutic agents include an ultraviolet laser configured to produce a laser beam at a wavelength appropriate for tissue ablation; a lens configured to focus and direct the laser beam to a site, such that an opening is produced in a surface of the site's tissue; a nozzle having an aperture that emits the laser beam and that controls delivery of one or more agents to the site; and an imaging device configured to monitor a depth of penetration of the one or more agents into the site's tissue.

Methods and systems for laser assisted delivery of therapeutic agents include preparing a site with an ultraviolet laser beam, at a wavelength appropriate for tissue ablation, such that an opening is produced in a surface of the site's tissue; and applying one or more agents to the prepared site, such that the agents penetrate the tissue through the opening to a predetermined depth.

An electrical connection includes a first electrical contact made of electrically conductive material. The first electrical contact is formed with a depression therein. Also included are a deformable pad, having a Young's modulus of less than 1,000,000 psi, which bears on the first contact; and a second electrical contact, made of electrically conductive material, which contacts the first electrical contact and is at least partially received into the depression. The deformable pad at least partially causes at least one lateral force on the first electrical contact, so as to induce the first electrical contact to make an electrical connection with the second electrical contact. An array of such contacts is also contemplated, as is an array of cantilevered contacts, which may or may not have depressions, and which are supported by at least one elastomeric pad, having a Young's modulus of less 72,500 psi.

High performance compliant wafer test probe

An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN.

Interconnections for flip-chip using lead-free solders and having reaction barrier layers

An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect by a selective electroless plating process.

Method for fabricating last level copper-to-C4 connection with interfacial cap structure

An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises a third electrically conductive pad, a fourth electrically conductive pad, and a first electrically conductive member. The fourth electrically conductive pad comprises a height that is different than a height of the first electrically conductive member. The electrically conductive member is electrically and mechanically connected to the fourth electrically conductive pad. A first solder ball connects the first electrically conductive pad to the third electrically conductive pad. The first solder ball comprises a first diameter. A second solder ball connects the second electrically conductive pad to the first electrically conductive member. The second solder ball comprises a second diameter. The first diameter is greater than said second diameter.

Structure and method for producing multiple size interconnections

A method is provided for removing exposed seed layers in the fabrication of solder interconnects on electronic components such as semiconductor wafers without damaging the interconnects or underlying wafer substrate and with a high wafer yield. The solder interconnects are lead free or substantially lead free and typically contain Sn. An oxalic acid solution is used to contact the wafer after an etching step to remove part of the seed layer. The seed layer is typically a Cu containing layer with a lower barrier layer containing barrier metals such as Ti, Ta and W. The lower barrier layer remains after the etch and the oxalic acid solution inhibits the formation of Sn compounds on the barrier layer surface which compounds may mask the barrier layer and the barrier layer etchant resulting in incomplete barrier layer removal on the wafer surface. Any residual conductive barrier layer can cause shorts and other wafer problems and result in a lower wafer yield. An electroetch is preferred to remove the portion of the seed layer overlying the lower barrier layer.

Inhibition of tin oxide formation in lead free interconnect formation

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Yorktown Heights, NY, United States of America

Donna S Zupanski-Nielsen