Samsung Electronics Co., Ltd.

Dongyun Yeo

Sangwook Park

Minsung Kim

Dougyong Sung

Keonwoo Kim

Suho Lee

Myoung Soo Park

Yun-Kwang Jeon

Seungwon Shin

Byeongsang Kim

Eungsu Kim

Hyanjung Lee

Heewon Min

Dongho Shin

Hakyoung Kim

Wooram Kim

Minji Park

Youngeun Kim

Daehyun Lee

Geunsik Oh

Kyeongtea Bang

Kyeongseok Jeong

Youngil Kang

Jaesuk Kim

Chunghun Lee

Kyoung-mi Choi

Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.

Plasma processing apparatus and semiconductor fabrication method using the same

A lift apparatus for moving an object up and down in a substrate processing apparatus, the lift apparatus including a body configured to support the object while a lift hole, included in the body, is overlapped by the object in a vertical direction; a lift pin configured to move the object up and down by moving up and down in the lift hole; a bellows including an upper flange, a lower flange, and a flexible pipe; a connector combined with a lower portion of the lift pin in the flexible pipe and configured to interfere with downward movement of the lift pin and to allow at least one from among rotation, sliding, and tilting of the lift pin; a load sensor configured to measure vertical load generated in accordance with movement of the lift pin; and an actuator configured to move the lift pin up and down.

Lift apparatus and substrate processing apparatus including the same

An electrostatic chuck includes a chuck plate configured to mount a substrate, an insulation pillar provided outside the chuck plate, the insulation pillar having a pin hole formed therein, a first movable ring provided on the insulation pillar, surrounding a side of the chuck plate, a second movable ring configured to cover at least a part of an upper portion of the first movable ring, and a driving pin configured to move in the pin hole of the insulation pillar in a vertical direction, the driving pin overlapped by at least a part of the first movable ring and at least a part of the second movable ring in the vertical direction. The driving pin is configured to drive the first movable ring and the second movable ring in the vertical direction or to drive the second movable ring in the vertical direction.

Electrostatic chuck and substrate processing apparatus including the same

An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

Electrostatic chuck, substrate processing apparatus, and method of manufacturing semiconductor device using the same

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Seoul, South Korea

Dongyun Yeo