Lawrence Livermore National Security, LLC

Dongxia Qu

Lars F Voss

Rebecca J Nikolic

Qinghui Shao

Clint Frye

John Winter Murphy

Roger A Henderson

Mark A Stoyer

According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.

Liquid semiconductor-halogen based electronics

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

Radiation tolerant microstructured three dimensional semiconductor structure

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Livermore, CA, United States of America

Dongxia Qu