Samsung Electronics Co., Ltd.

Dongwook Won

Yongsuk Choi

Takahiko Inada

Keo-sung Park

Hakyu Choi

Jaeheum Baek

Hyunjin Jeon

A method of manufacturing an image sensor includes forming a first dopant region having a second conductivity type in a semiconductor substrate including first and second surfaces. The semiconductor substrate has a first conductivity type different from the second conductivity type. The method further includes forming a pixel isolation structure defining pixel regions in the semiconductor substrate, forming a vertical trench by patterning the first surface in each of the pixel regions, forming a mask pattern exposing each of the pixel regions on the first surface, in which the mask pattern includes a residual mask pattern filling at least a portion of the vertical trench, forming a second dopant region having the second conductivity type in the semiconductor substrate by using the mask pattern as an ion-implantation mask, in which the second dopant region is adjacent to the vertical trench, and forming a transfer gate electrode in the vertical trench.

Image sensor and method of manufacturing the same

An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a same column line, the first pixel including 2N sub-pixels sharing a first floating diffusion node and the second pixel including 2N sub-pixels sharing a second floating diffusion node, wherein N is a positive integer greater than or equal to two, a timing generator configured to change a reset order and a readout order of 4N sub-pixels included in the first pixel and the second pixel, according to an exposure time setting value, and output a row address according to the changed orders, and a row driver configured to drive the pixel array based on the row address.

Image sensor and electronic device comprising the same

Growing community of inventors

Suwon-si, South Korea

Dongwook Won