Samsung Electronics Co., Ltd.

Dongwon Lim

Sungjin Kim

Seok-ho Shin

Jaepil Lee

Joodong Kim

Bonhwi Gu

Hyekyeong Kweon

Kweonjae Lee

A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.

Semiconductor device

A capacitor in a semiconductor device may include a lower electrode, a dielectric layer including a metal oxide and disposed on the lower electrode, a first material layer including aluminum oxide (AlO) and disposed on the dielectric layer, a second material layer including titanium oxynitride (TiON) and disposed on the first material layer, and an upper electrode disposed on the second material layer, wherein the first material layer is between the dielectric layer and the second material layer, and the dielectric layer is between the lower electrode and the first material layer.

Semiconductor device including a capacitor

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Seoul, South Korea

Dongwon Lim