Lg Electronics Inc.

Sk Telecom Company, Ltd.

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Industry-university Cooperation Foundation Hanyang University

Hanwha Techwin Co., Ltd.

Iucf-hyu

Dongwon Kim

Byeungwoo Jeon

Joohee Moon

Haekwang Kim

Yunglyul Lee

Sunyeon Kim

Jeongyeon Lim

Juock Lee

Mincheol Park

Mingyu Jo

Hyoungmee Park

Jongki Han

Hwanjin Jung

Keun Hwi Cho

Youngmin Kim

Myung Gil Kang

Kyeonghwan Kim

Jinhan Song

HaYoon Kim

Changwoo Son

Kyoungtae Kim

Hyunchul Kim

Hyundong Kim

Sanghyun Lee

Kyosoon Chae

Sangwon Kim

Sangwoo Kim

Sungmin Kim

Dongsuk Shin

Dongsoo Lee

Seokhoon Kim

Sungho Hong

Pankwi Park

Daewon Kim

Daekee Shin

Daewon Ha

Sunjung Park

Hoon Moo Choi

Sanghoon Lee

Sanghun Kim

Dongjin Park

Jinbum Kim

Donggyu Lee

Jiyoung Park

Kibaek Kim

Naeun Kim

Chaseung Jun

Jinwoong Kim

Gueisam Lim

Byungwook Min

Yunhee Ku

Byungkeol Choi

Gyumin Lee

Jaehoon Choi

Keunhwi Cho

Myunggil Kang

Hyunseok Seo

Rayoung Park

Sunho Lee

Bonkwon Koo

Seungchul Park

Beomjin Park

Yongju Yang

Yongseok Kim

Gyujeong Lee

Heakyung Yoo

Sungryong Kim

Nayoung Kim

Donghun Lee

Taeyong Kwon

Munhyeon Kim

Hagju Cho

Soonmoon Jung

Dae Sin Kim

Sangmoon Lee

Kiho Bang

Jinkyu Kim

Sung-Dae Cho

Injun Bae

Hojin Lee

Junggun You

Changwoo Lee

Kyoungsuk Ko

Sungil Park

Sang-min Shin

Jingoo Jung

Woocheol Shin

Jaehoon Shin

Hyojin Kim

Hwichan Jun

Heeeun Yoo

Minju Lee

Jiwoong Kim

Bongseok Suh

Siyoung Cha

Jongmoo Huh

Junhee Lee

Seyul Son

Yeongnam Ahn

Beomsoo Hwang

A wearable device according to an embodiment of the present invention includes an inner body; an ultrasonic generator attached to the inner body, an outer body attached to the ultrasonic generator, wherein the ultrasonic generator includes at least one ultrasonic vibrator, a positive electrode substrate connected to the at least one ultrasonic vibrator, and a negative electrode substrate connected to the at least one ultrasonic vibrator, wherein the at least one ultrasonic vibrator is disposed between the positive electrode substrate and the negative electrode substrate.

Wearable device

A semiconductor device includes a substrate that includes a peripheral region, a first active pattern on the peripheral region, a first source/drain pattern on the first active pattern, a first channel pattern formed on the first active pattern and connected to the first source/drain pattern, wherein the first channel pattern includes semiconductor patterns that are stacked and spaced apart from each other, a first gate electrode that extends in a first direction and crosses the first channel pattern, a gate insulating layer interposed between the first gate electrode and the first channel pattern, a first gate contact disposed on the first gate electrode and that extends in the first direction, and a first dielectric layer interposed between the first gate electrode and the first gate contact. The first dielectric layer is interposed between the first gate contact and the first gate electrode and extends in the first direction.

Semiconductor device

A semiconductor device including a substrate that includes first and second regions; a first active pattern on the first region and a second active pattern on the second region; a first gate electrode on the first active pattern and a second gate electrode on the second active pattern; and a first cutting pattern that penetrates the first gate electrode and a second cutting pattern that penetrates the second gate electrode, wherein a width of the first gate electrode as measured in one direction is less than a width of the second gate electrode, a maximum width of the first cutting pattern is greater than the width of the first gate electrode, and a minimum width of the second cutting pattern is less than the width of the second gate electrode.

Semiconductor device and method of fabricating the same

A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate and extending in a first direction; a pair of source/drain patterns provided on the active pattern and spaced apart from each other in the first direction; a plurality of channel layers vertically stacked and spaced apart from each other on the active pattern between the pair of source/drain patterns; a gate electrode extending in a second direction between the pair of source/drain patterns, the gate electrode being provided on the active pattern and surrounding the plurality of channel layers, and the second direction intersecting the first direction; and a gate spacer provided between the plurality of channel layers, and between the gate electrode and the pair of source/drain patterns. The gate spacer includes a plurality of first spacer patterns and a plurality of second spacer patterns that are alternately stacked on sidewalls of the pair of source/drain patterns.

A semiconductor device includes an active region on a substrate, source/drain patterns on the active region, channel patterns on the active region and connected to the source/drain patterns, each of the channel patterns including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, gate electrodes, which are respectively on the channel patterns and are extended in a first direction and parallel to each other, and active contacts, which are electrically and respectively connected to the source/drain patterns. A bottom surface of a first active contact is located at a first level, and a bottom surface of a second active contact is located at a second level higher than the first level. A bottom surface of a third active contact is located at a third level higher than the second level.

Semiconductor device including source/drain patterns

A semiconductor device may include a first active pattern on a substrate, a pair of first source/drain patterns on the first active pattern and a first channel pattern between the first source/drain patterns, the first channel pattern including first semiconductor patterns, which are spaced apart from each other in a stacked formation, a gate electrode on the first channel pattern, a first gate cutting pattern adjacent to the first channel pattern that penetrates the gate electrode, and a first spacer pattern between the first gate cutting pattern and the first channel pattern. The first spacer pattern may include a first remaining pattern adjacent to an outermost side surface of at least one of the first semiconductor patterns and a second remaining pattern on the first remaining pattern. The second remaining pattern may be spaced apart from the first gate cutting pattern.

A chemical supply system, includes: a chemical container receiving station configured to receive a chemical container, inspect chemical information of the chemical container and confirm the chemical information; a temporary storage configured to store the chemical container; a chemical supply device configured to supply a chemical in the chemical container to a place of use of the chemical; a first robot configured to transport the chemical container for which the chemical information is confirmed from the chemical container receiving station; and a second robot configured to carry the chemical container transported by the first robot into the chemical supply device.

Chemical supply system

A semiconductor device includes a substrate, an active fin on the substrate, and a transistor on the active fin. The transistor includes a lower channel layer, an intermediate channel layer, and an upper channel layer sequentially stacked, and a gate structure traversing the active fin, respectively surrounding the channel layers, and including a gate dielectric and a gate electrode. The gate electrode includes a lower electrode portion between the active fin and the lower channel layer, an intermediate electrode portion between the lower channel layer and the intermediate channel layer, and an upper electrode portion between the intermediate channel layer and the upper channel layer. The gate electrode includes a work function adjusting metal element, and a content of the work function adjusting metal element in the lower electrode portion is different from that in each of the intermediate electrode portion and the upper electrode portion.

Semiconductor device including plurality of channel layers

A semiconductor device may include: an active pattern on a substrate and extending in a first direction; a plurality of source/drain patterns on the active pattern and spaced apart from each other in the first direction; a gate electrode between the plurality of source/drain patterns that crosses the active pattern and extends in a second direction intersecting the first direction; and a plurality of channel patterns stacked on the active pattern and configured to connect two or more of the source/drain patterns to each other. The channel patterns may be spaced apart from each other. Each of the channel patterns may include a first portion between the gate electrode and the source/drain patterns, and a plurality of second portions connected to the first portion and overlapped with the gate electrode in a direction perpendicular to a plane defined by an upper surface of the substrate.

Semiconductor devices and methods of fabricating the same

A semiconductor device includes first and second active patterns respectively on the first and second active regions of a substrate, a gate electrode on the first and second channel patterns, active contacts electrically connected to at least one of the first and second source/drain patterns, a gate contact electrically connected to the gate electrode, a first metal layer on the active and gate contacts and including a first and second power line, and first and second gate cutting patterns below the first and second power lines. The first active pattern may include first channel pattern between a pair of first source/drain patterns. The second active pattern may include a second channel pattern between a pair of second source/drain patterns. The first and second gate cutting patterns may cover the outermost side surfaces of the first and second channel patterns, respectively.

A light outputting device for scalp care according to an embodiment of the present invention comprises: a dome-shaped outer case forming the outer shape; an inner case formed inside the outer case; a plurality of laser light sources disposed in the space between the outer case and the inner case; photodiodes included in the plurality of laser light sources, respectively; and a processor which acquires a light amount sensing value of a first photodiode among the plurality of photodiodes, sets an amount of light for a first laser light source including the first photodiode on the basis of the acquired light amount sensing value, and drives the first laser light source on the basis of the set amount of the light.

Light outputting device for scalp care, and control method therefor

A semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.

An integrated circuit device includes a fin-type active area along a first horizontal direction on a substrate, a device isolation layer on opposite sidewalls of the fin-type active area, a gate structure along a second horizontal direction crossing the first horizontal direction, the gate structure being on the fin-type active area and on the device isolation layer, and a source/drain area on the fin-type active area, the source/drain area being adjacent to the gate structure, and including an outer blocking layer, an inner blocking layer, and a main body layer sequentially stacked on the fin-type active area, and each of the outer blocking layer and the main body layer including a Si1-xGex layer, where x≠0, and the inner blocking layer including a Si layer.

Integrated circuit device

A semiconductor device includes: an active pattern on a substrate, wherein the active pattern includes a plurality of channel layers stacked on one another; a plurality of source/drain patterns spaced apart from each other in a first direction and disposed on the active pattern, wherein the plurality of source/drain patterns are connected to each other through the plurality of channel layers; and first and second gate electrodes at least partially surrounding the channel layers and extending in a second direction, wherein the second direction intersects the first direction, wherein the active pattern has a first sidewall and a second sidewall that faces the first sidewall, and wherein a first distance between the first sidewall of the active pattern and an outer sidewall of the first gate electrode is different from a second distance between the second sidewall of the active pattern and an outer sidewall of the second gate electrode.

Semiconductor device including a field effect transistor and a method of fabricating the semiconductor device

A gas supply system includes a loading/unloading stage including a cradle loader where a cradle loaded with a gas container is loaded, a test buffer chamber is configured to test the gas container, and a loading/unloading robot configured to transfer the gas container between the cradle and the test buffer chamber. A gas supply stage includes a storage queue configured to temporarily store the gas container, a gas supply cabinet where the gas container is mounted, and a transfer robot configured to transfer the gas container between the test buffer chamber and the storage queue and between the storage queue and the gas supply cabinet.

Transfer robot for transferring gas container, gas supply cabinet, and gas supply system including the same

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Seoul, South Korea

Dongwon Kim