Applied Materials, Inc.

Dongwon Choi

Majeed Foad

Kartik Ramaswamy

Hiroji Hanawa

Shijian Li

Biagio Gallo

Seon-Mee Cho

Peter I Porshnev

Manoj Vellaikal

Tze Wing Poon

Dong Hyung Lee

Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls

Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

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Santa Clara, CA, United States of America

Dongwon Choi