Samsung Electronics Co., Ltd.

International Business Machines Corporation

Hyundai Motor Company

Stmicroelectronics Gmbh

Dongseok Lee

Keunhee Bai

Yongho Jeon

Sekoo Kang

Tenko Yamashita

Yoonsik Woo

Jinkook Kong

Susan S Fan

Soohyung Woo

Jungpyo Hong

Eunho Lee

David Moreau

HanNa Cho

Jeichoon Yang

Changho Yang

A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

Semiconductor device including gate structure and separation structure

A method of fabricating a semiconductor structure includes forming a plurality of semiconductor fins disposed on a semiconductor substrate, wherein at least one of the fins is an unwanted fin including a semiconductor material; providing a conformal protective layer over the plurality of semiconductor fins; forming a mask having an opening over the unwanted fin; removing a portion of the unwanted fin to expose a fin spike; oxidizing the fin spike to form an oxidized semiconductor material; and removing the oxidized semiconductor material to expose a fin base.

Fin formation for semiconductor device

Methods of manufacturing a semiconductor device are provided. The method may include forming an etch target layer on a substrate, forming a carbon layer doped with boron on the etch target layer, a top end portion of the carbon layer having a different boron concentration from a bottom end portion of the carbon layer, patterning the carbon layer to form at least one opening exposing the etch target layer, and etching the exposed etch target layer using the carbon layer as an etch mask.

Methods of manufacturing a semiconductor device

A variable compression ratio (VCR) apparatus with dual eccentric links is mounted on an engine, receives combustion power of a fuel-air mixture from a piston to rotate a crank shaft and changes a compression ratio of the fuel-air mixture. The VCR apparatus may include a connecting rod having a large end portion formed at one end thereof, which is connected to the crank shaft to receive a torque of the engine, and a small end portion formed at the other end thereof, the small end portion having a coupling hole formed therein, a pair of eccentric links having one ends coupled to the coupling hole from both sides facing each other and integrally rotating, and an eccentric rod connected to the other ends of the eccentric links and rotating within a predetermined angle range. The eccentric rod may be a pair of eccentric rods.

Variable compression ratio apparatus with dual eccentric links

Growing community of inventors

Hwaseong-si, South Korea

Dongseok Lee