Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Dongseob Kim

Shikai Wang

Jaeyun Jung

Dengtao Li

Yadong Liang

Jun Geng

Mingming Wang

Jaemoon Chung

Qianqian Li

Yadong Xu

Qiuping Huang

Jianshe Xue

Liangliang Li

Zhengwei Chen

Huadong Wang

Hao Yin

Daeyoung Choi

Xiaoning Liu

Shengrong Li

Xuanqi Liang

Shiwei Lv

Seong Sil Im

Zhongren Jiang

Chao-Huan Hsu

Huawei Xu

Disclosed is a liquid chemical vapor recovery device, a wet stripping device, a photoresist stripping process and a method for manufacturing a thin film transistor-liquid crystal display using the same. The liquid chemical vapor recovery device comprises: an exhaust pipe for discharging a gas in a processing chamber for wet processing with a liquid chemical, the gas comprising a vapor of the liquid chemical; and a reflux pipe for refluxing the liquid chemical condensed in the exhaust pipe to a liquid chemical storage tank, the reflux pipe having an inlet connected to the exhaust pipe and an outlet connected to the liquid chemical storage tank, wherein, at least a part of the exhaust pipe positioned upstream of the inlet of the reflux pipe is formed as a pipe segment with a rugged inner surface.

Liquid chemical vapor recovery device, wet stripping device, photoresist stripping process, and method for manufacturing thin film transistor-liquid crystal display using the same

The present disclosure provides a wet etching machine and an etching method. The wet etching machine including an etching chamber in which at least two etching layers are disposed. The etching layers are successively overlapped with each other from up to down, and each etching layer includes a first transfer carrier for receiving and transferring a substrate to be etched and a spraying apparatus disposed right above the first transfer carrier for spraying etching solution. When the total etching time is needed to be longer than the transfer time of the substrate without stopping the substrate, the present disclosure can solve the problems in the prior art of causing the takt time decreased due to the stopping time of the substrate is required to be increased or causing the area of the facility increased due to the number of the etching chambers connected in series is required to be increased.

Wet etching machine and etching method using the same

A liquid knife cleaning device is provided, and it includes a splash shield; a liquid knife, which is located under the splash shield; an oblique baffle, which is located between the splash shield and the liquid knife, and a lower side of which is fixedly bonded to the top of a blade of the liquid knife. The oblique baffle can act to isolate the liquid knife and the substrate on the delivery roll from a majority of water vapor, and droplets dripping on the oblique baffle can flow down along a slope of the oblique baffle, and will not drip on the substrate that has not been rinsed by the liquid knife. Effects of droplets on the uniformity of the substrate can be greatly reduced by the present technique, thereby enhancing the product quality.

Liquid knife cleaning device

The present disclosure relates to the technical field of glass substrate cleaning. Specifically, the present disclosure provides a glass substrate detergent tank which can solve the technical problem of wasting detergent solution. The detergent tank includes a tank body enclosed by a top face, a bottom face and side faces. There are a water inlet, a water outlet and a vent hole in tank body. There is a partition plate disposed between two facing inside faces of the tank body, which separate the tank body into two cavities communicating at the bottom. The detergent tank according to the embodiment of the present disclosure will not let froth discharge outside the tank body with gas, and thus can reduce the amount of wasted detergent solution, thereby extending the usage time of the detergent solution.

Glass substrate detergent tank and cleaning device

The present invention provides an array substrate, a method for manufacturing the same and a display device, and relates to technical field of displays. The method for manufacturing an array substrate comprises forming a metal layer on a substrate and removing superficial metallic oxide on the metal layer by a washing process. The method for manufacturing an array substrate according to the present inversion can remove the superficial metal oxide on the metal layer and improve the performance of a TFT.

Array substrate, method for manufacturing the same and display device

Embodiments of the invention provide a conductive structure, a thin film transistor, an array substrate, and a display device. The conductive structure comprises a copper layer formed of copper or copper alloy; a blocking layer for preventing copper ions of the copper layer from diffusing outward; and a diffusion prevention layer for preventing exterior ions from diffusing to the copper layer and disposed between the copper layer and the blocking layer. The multilayer conductive structure according to an embodiment of the invention can prevent exterior ions from diffusing into a copper layer and prevent copper ions from diffusing outward to reduce ions diffusion that adversely impacts the electricity performance and chemical corrosion resistance of the copper metal layer, and meanwhile can enhance adhesiveness of the conductive structure, which may be helpful for etching/patterning of the multilayer conductive structure.

Thin film transistor array substrate and a thin film transistor which comprise a conductive structure comprising a blocking layer and a diffusion prevention layer

Growing community of inventors

Beijing, China

Dongseob Kim