Beijing Naura Microelectronics Equipment Co., Ltd.

Beijing Nmc Co., Ltd.

Dongsan Li

Chun Long Wang

Gang Wei

Yiming Zhang

Xingcun Li

Changle Guan

Xiaoping Shi

Longchao Zhao

Qiushi Xie

Qingjun Zhou

Mingda Qiu

Mingming Song

Chun Wang

The present disclosure discloses a pattern sheet, a semiconductor intermediate product, and a hole etching method. The pattern sheet includes a substrate, a dielectric layer, and a mask structure. The mask structure includes a multi-layer mask layer. An uppermost mask layer is a photoresist layer. A thickness of each layer of the mask layer and etching selectivity ratios between the layers below the mask layer satisfy that in each two neighboring layers of the mask layer, a lower layer of the mask layer is etched to form a through-hole penetrating a thickness of the lower layer of the mask layer, a remaining thickness of the upper layer of the mask layer is greater than or equal to zero.

Pattern sheet, semiconductor intermediate product, and hole etching method

A reaction chamber is provided. The reaction chamber includes a chamber body, a dielectric window, and a power supplier. The dielectric window is provided on top of the chamber body along a first direction and hermetically connected with the chamber body. Each coil of a plurality of sets of coils is wound around an outer surface of the dielectric window at an interval along the first direction. The plurality of sets of coils are connected in parallel, with first ends electrically coupled to the power supplier for supplying power to each set of the plurality of sets of coils, and with second ends grounded. The second ends of the plurality of sets of coils are arranged in proximity between the first ends.

Reaction chamber and plasma processing apparatus

A substrate etching method and a substrate processing device, the substrate etching method includes: S1: placing a substrate to be processed into a reaction chamber; S2: supplying etching gas into the reaction chamber; S3: turning on an excitation power supply to generate plasma in the reaction chamber; S4: turning on a bias power supply to apply bias power to the substrate; S5: turning off the bias power supply, and meanwhile, starting to supply deposition gas into the reaction chamber; S6: stopping supply of the deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; S7: repeating steps S5-S6, until the etching process is completed. In the whole etching process, the etching operation is always performed, and the deposition operation is performed sometimes. Therefore, during the deposition operation, the plasma in the reaction chamber can etch away at least a part of deposited polymers formed by the deposition operation on a sidewall of an etched section, so that the sidewall of the etched section of the substrate is smooth.

Substrate etching method and substrate processing device

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Beijing, China

Dongsan Li