Dalian University of Technology

Other

Dongming Guo

Renke Kang

Zhenyu Zhang

Junfeng Cui

Kuo Liu

Yongqing Wang

Haibo Liu

Bo Wang

Ping Zhou

Ying Yan

Leilei Chen

Kai Wang

Te Li

Xianglong Zhu

Jiang Guo

Zhigang Dong

Xu Li

Xuyue Wang

Shang Gao

Ning Huang

Shujie Liu

Yuefeng Du

Guang Feng

Lianji Wang

Wenji Xu

Yande Liang

Lin Wang

Tianran Liu

Zhichao Geng

Xiaofei Ma

Chengxin Wang

Guolin Yang

The present invention proposes an in-situ freezing machining method for an integrated thin-walled array structure. In the method, the area among cups is cut off first; then, the outer walls of a cup array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cup array is carried out. Then, hoisting and turning over are carried out, and the area among cavities is cut off; then, the outer walls of a cavity array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cavity array is carried out. The method realizes in-situ freezing clamping of workpieces, avoids error accumulation caused by repeated installation of a fixture, and can refrigerate efficiently, suppress ambient and cutting thermal interference, and ensure the stability of freezing fixture.

In-situ freezing machining method for integrated thin-walled array structure

A rocker polishing apparatus for full-aperture deterministic polishing of a planar part includes a control system, a substrate, a lifting plate, a polishing module and a measuring module. The polishing module and the measuring module are arranged on the substrate. The lifting plate is arranged between the polishing module and the measuring module. The polishing module includes a rocker mechanism, a polishing pad surface dressing mechanism, a polishing pad surface profile measuring apparatus and a continuous polishing pad mechanism. The apparatus allows the material removal rate distribution of the planar part and the surface profile of the planar part be in the normalized mirror symmetry relationship by controlling the material removal rate distribution on the surface of the planar part, thereby implementing the deterministic polishing of the planar part and ensuring the efficient convergence of the surface profile of the planar part in the polishing process.

Rocker polishing apparatus and method for full-aperture deterministic polishing of a planar part

The present invention relates to a slanting-bed feed processing machine tool of a large propeller. The machine tool comprises a slanting column feed bed, a machine tool spindle, a workpiece rotary worktable, a large propeller and a bed feed mechanism. The present invention coordinates the geometrical relationship between the machine tool and the large propeller to ensure that the slanting column feed bed moves between two blades, thereby reducing the overhang length of the spindle. Different forms of workpiece rotary worktables and bed feed mechanisms are selected according to different slanting column feed beds. Four types of slanting column feed beds are designed, which can be selected, optimized and applied for different processing objects. The present invention enhances the processing stiffness of the spindle and solves the problem of poor processing quality of the large propeller caused by machine tool vibration.

Slanting-bed feed processing machine tool of large propeller

A nanometer cutting depth high-speed single-point scratch test device includes a workbench, an air-bearing turntable, a test piece fixture, a test piece, a Z-direction feeding device, a nano positioning stage, a force sensor and a scratch tool. A micro convex structure with controllable length and height is machined in a position of the test piece to be scratched.

Nanometer cutting depth high-speed single-point scratch test device and test method thereof

A TEM electromechanical in-situ testing method of one-dimensional materials is provided. A multi-function sample stage which can compress, buckle and bend samples is designed and manufactured. A carbon film on a TEM grid of Cu is eliminated, and the TEM grid of Cu is cut in half through the center of the circle. The samples are dispersed ultrasonically in alcohol and dropped on the edge of the semicircular grid of Cu with a pipette. A single sample is fixed on the edge of a substrate of the sample stage with conductive silver epoxy by using a micromechanical device under an optical microscope, and conductive silver paint is applied to the surface of the substrate of the sample stage; and an electromechanical in-situ testing is conducted in a TEM. This provides a simple and efficient sample preparation and testing method for a TEM electromechanical in-situ observing experiment.

TEM electromechanical in-situ testing method of one-dimensional materials

A measurement method for micro topography and roughness of internal surface of gap belongs to the technical field of precision measurement and is realized based on a measurement system which comprises a PC, a controller, a flexible mechanism and a measurement thin film. The measurement thin film has a copy function and is bonded to the flexible mechanism. The PC is connected with the flexible mechanism through the controller to control the flexible mechanism to expand or contract. The measurement method can effectively solve the measurement problem of the micro topography and surface roughness of the internal surface of the gap with a narrow inlet size. The method is simple and easy to operate, and the device is easy to carry, low in cost and high in measurement accuracy.

Measurement method for micro topography and roughness of internal surface of gap

A self-healing method for fractured single crystal SiC nanowires. A hair in a Chinese brush pen of yellow weasel's hair moves and transfers nanowires, which are placed on an in-situ TEM mechanical microtest apparatus. An in-situ nanomechanical tension test is realized. The nanowires are loaded. Displacement is 0-200 nm. Fracture strength of the single crystal nanowires is 12-15 GPa. After the nanowires are fractured, unloading causes slight contact between the fractured end surfaces, electron beam is shut off, and self-healing of the nanowires is conducted in a vacuum chamber. Partial recrystallization is found at a fracture after self-healing through in-situ TEM representation. A fracture strength test is conducted again after self-healing. A fractured position after healing is the same as the position before healing. The fracture strength of the single crystal nanowires after self-healing is 1-2.5 GPa. The recovery ratio of the fracture strength is 10-20%.

Self-healing method for fractured SiC single crystal nanowires

The present invention provides a self-healing method for fractured SiC amorphous nanowires. A goat hair in a Chinese brush pen of goat hair moves and transfers single crystal nanowires under an optical microscope. On an in-situ nanomechanical test system of a TEM, local single crystal nanowires are irradiated with an electron beam for conducting amorphization transformation. Amorphous length of a single crystal after transformation is 60-100 nm. A fracture strength test is conducted on the amorphous nanowires in the single crystal after transformation in the TEM; and fracture strength of the amorphous nanowires is 9-11 GPa. After the amorphous nanowires are fractured, unloading causes a slight contact between the fractured end surfaces; and self-healing of the nanowires is conducted after waiting for 16-25 min in a vacuum chamber of the TEM. Atom diffusion is found at a healed fracture through in-situ TEM representation; and recrystallization is found in the amorphous nanowires. The present invention provides a method for realizing self-healing for fractured SiC amorphous nanowires without external intervention.

Self-healing method for fractured SiC amorphous nanowires

The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 &#x3bc;m, a tip curvature radius of 0.8-3 &#x3bc;m and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 &#x3bc;m. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires. The tip of the tapered hair is dipped in a small drop of conductive silver epoxy, and the conductive silver epoxy is respectively dropped on both ends of the nanowires; and the radius of the dropped conductive silver epoxy is 4-8 &#x3bc;m. The present invention realizes a method for moving and transferring nanowires using tapered hair through the mobile platforms of the two optical microscopes.

Method for moving and transferring nanowires using tapered hair of diameter on micron range

A substrate grinding and polishing device comprising separate grinding and polishing units for operating on a work-piece. The work piece is clamped to a rotating work table under the units and a track underneath the rotating work table allows for quick transfer from the grinding unit to the polishing unit or vice versa. This setup allows for easy transfer as well as quick adjustment between different modes of grinding and polishing.

Multifunctional substrate polishing and burnishing device and polishing and burnishing method thereof

A detection device is described for measuring the vaporization-melt ratio, the device including a light source, a first and second optical lens group, a slit, a first and second steering mirror, a first and second primary mirror, a glass container, a colored blade, and a high-speed recording analyzer. The first primary mirror and the second primary mirror are symmetrically placed at both ends of the glass container. The first optical lens group is located between the light source and the slit. The second optical lens group is located between the colored blade and the high-speed recording analyzer. The first steering mirror is installed behind the slit, passing the light from the slit to the first primary mirror. The light reflected by the second primary mirror is passed to the colored blade from the second steering mirror located between the second primary mirror and the colored blade.

Device and method for measuring vaporization-melt ratio

Growing community of inventors

Dalian, China

Dongming Guo