Texas Instruments Corporation

Dongmei Lei

Brian Goodlin

Honglin Guo

Joe W McPherson

One aspect of the invention provides an integrated circuit(IC) []. The IC comprises transistors [] and contact fuses []. The contact fuses each comprise a conducting layer [], a frustum-shaped contact [] has a narrower end that contacts the conducting layer and a first metal layer [] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [] that is located over and contacts the first metal layer.

Semiconductor device with improved contact fuse

One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.

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Lewisville, TX, United States of America

Dongmei Lei