Chinese Academy of Sciences

Dongliang Zhang

Li Fei Zheng

Qian Wang

Xinhong Cheng

Yuehui Yu

Zhongjian Wang

Duo Cao

Lingyan Shen

Jingjie Li

An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene () is transferred to an AlGaN () surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material () is grown on the graphene (), and the high-k material () and the graphene () are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene () has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.

Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method

Growing community of inventors

Shanghai, China

Dongliang Zhang